DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, K | - |
dc.contributor.author | An, TK | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Jeong, YJ | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Baek, JY | - |
dc.contributor.author | Kim, YH | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2016-03-31T07:52:56Z | - |
dc.date.available | 2016-03-31T07:52:56Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-11-25 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.other | 2015-OAK-0000031069 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14113 | - |
dc.description.abstract | With the goal of achieving high-performance electrically stable organic field-effect transistors (OFETs), we chemically graft a fluorinated polymer nanolayer onto the polar oxide dielectric surfaces via a simple and easy fabrication process in ambient air. The para-fluorine-thiol click reaction between poly(pentafluorostyrene) (PFS) and mercaptopropyltrimethoxysilane is used to synthesize a graftable fluorinated polymer (gPFS). The surface characteristics of the gPFS-treated SiO2 dielectrics and the crystal structure and grain growth of the overlying organic semiconductors are investigated. Various semiconductor materials are employed for the OFETs prepared with gPFS-treated SiO2 dielectrics, including vacuum-processed pentacene, N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide, solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene, and poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-1,2-di(2,2'-bithiophen-5-yl)ethane. Three OFETs are prepared with different dielectrics: (i) bare SiO2, (ii) gPFS-treated SiO2, and (iii) perfluorooctyltriethoxysilane-treated SiO2. The OFETs prepared with the gPFS-treated SiO2 dielectrics display the highest mobilities and smallest hysteresis. Furthermore, the gPFS-treated SiO2 provides the best device stability under a sustained gate bias, suggesting that the gPFS surface minimize the number of traps present in the OFET. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | CHEMISTRY OF MATERIALS | - |
dc.subject | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | THRESHOLD VOLTAGE SHIFTS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | SURFACE VISCOELASTICITY | - |
dc.subject | PERFORMANCE | - |
dc.subject | PENTACENE | - |
dc.subject | SILICON | - |
dc.subject | GROWTH | - |
dc.subject | SEMICONDUCTORS | - |
dc.title | Grafting Fluorinated Polymer Nano layer for Advancing the Electrical Stability of Organic Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1021/CM5030266 | - |
dc.author.google | Kim, K | - |
dc.author.google | An, TK | - |
dc.author.google | Kim, J | - |
dc.author.google | Jeong, YJ | - |
dc.author.google | Jang, J | - |
dc.author.google | Kim, H | - |
dc.author.google | Baek, JY | - |
dc.author.google | Kim, YH | - |
dc.author.google | Kim, SH | - |
dc.author.google | Park, CE | - |
dc.relation.volume | 26 | - |
dc.relation.issue | 22 | - |
dc.relation.startpage | 6467 | - |
dc.relation.lastpage | 6476 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | CHEMISTRY OF MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.26, no.22, pp.6467 - 6476 | - |
dc.identifier.wosid | 000345550600019 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6476 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 6467 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 26 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84912531841 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 6 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE SHIFTS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | SURFACE VISCOELASTICITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
library@postech.ac.kr Tel: 054-279-2548
Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.