DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, WH | - |
dc.contributor.author | Son, JY | - |
dc.contributor.author | Jane, HM | - |
dc.date.accessioned | 2016-03-31T07:55:00Z | - |
dc.date.available | 2016-03-31T07:55:00Z | - |
dc.date.created | 2015-02-04 | - |
dc.date.issued | 2014-05-14 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | 2014-OAK-0000030970 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14152 | - |
dc.description.abstract | We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.title | Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | - |
dc.identifier.doi | 10.1021/AM501630K | - |
dc.author.google | Kim, WH | - |
dc.author.google | Son, JY | - |
dc.author.google | Jane, HM | - |
dc.relation.volume | 6 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 6346 | - |
dc.relation.lastpage | 6350 | - |
dc.contributor.id | 10084272 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.9, pp.6346 - 6350 | - |
dc.identifier.wosid | 000336075300043 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 6350 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 6346 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 6 | - |
dc.contributor.affiliatedAuthor | Jane, HM | - |
dc.identifier.scopusid | 2-s2.0-84900849233 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 11 | - |
dc.description.scptc | 11 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | LA SUBSTITUTION | - |
dc.subject.keywordPlus | RESOLUTION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordAuthor | BiFeO3 thin film | - |
dc.subject.keywordAuthor | ferroelectric response | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | conducting-filament | - |
dc.subject.keywordAuthor | domain-wall motion | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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