(111)-Oriented Pb(Zr0.52Ti0.48)O-3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition

Abstract

Perovskite Pb(Zr0.52Ti0.48)O-3 (PZT) thin film with perfect (111)-orientation was achieved on CoFe2O4 seeded-Pt(111)/Ti/SiO2/Si substrate by pulsed laser deposition technique using target with limited excess Pb. Pyrochlore phase formation was suppressed on Pt by CoFe2O4 nano-seed layer (similar to 7 nm), and perovskite PZT was achieved at temperature as low as 550 A degrees C. CoFe2O4 seed layer that has perfect (111)-orientation acts as a promoter for perfectly (111)-orientated growth of PZT. PZT film grown at 600 A degrees C has higher degree of crystalline orientation, lower surface roughness, and compacted microstructure in comparison to the film grown at 550 A degrees C. The PZT film has a nano-size grain-feature structure with grain size of about 40-60 nm. Perovskite formation was also confirmed by ferroelectric measurement. The ferroelectric properties of PZT film grown at 600 A degrees C is higher than that grown at 550 A degrees C which could be attributed to the enhancement of the crystalline orientation, crystallinity, and microstructure of the film.