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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, KK | - |
| dc.contributor.author | Kee, J | - |
| dc.contributor.author | Kim, SH | - |
| dc.contributor.author | Park, MS | - |
| dc.contributor.author | Park, CG | - |
| dc.contributor.author | Kim, DK | - |
| dc.date.accessioned | 2016-03-31T07:55:56Z | - |
| dc.date.available | 2016-03-31T07:55:56Z | - |
| dc.date.created | 2015-02-04 | - |
| dc.date.issued | 2014-04-01 | - |
| dc.identifier.issn | 0040-6090 | - |
| dc.identifier.other | 2014-OAK-0000030891 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14188 | - |
| dc.description.abstract | We have evaluated the conformality and electrical properties of Al2O3 films deposited by atomic layer deposition at temperatures below 300 degrees C for through-silicon via (TSV) applications. Al2O3 films were able to be conformally deposited on the scallops of 50-mu m-wide, 100-mu m-deep TSV at the temperature range between 200 and 300 degrees C. The median breakdown fields of the metal-insulator-metal device with 30-nm-thick Al2O3 layer were above 6 MV/cm for the films deposited at 250 and 300 degrees C, while that at 200 degrees C was inferior due to residual carbon impurities in the oxide layer. (C) 2014 Elsevier B.V. All rights reserved. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.relation.isPartOf | THIN SOLID FILMS | - |
| dc.subject | Aluminum oxide | - |
| dc.subject | Atomic layer deposition | - |
| dc.subject | Through-silicon via | - |
| dc.subject | Step coverage | - |
| dc.subject | Breakdown field | - |
| dc.subject | High-k dielectrics | - |
| dc.subject | 3-DIMENSIONAL INTEGRATED-CIRCUITS | - |
| dc.subject | BINARY REACTION SEQUENCE | - |
| dc.subject | SURFACE-CHEMISTRY | - |
| dc.subject | THIN-FILM | - |
| dc.subject | CAPACITANCE | - |
| dc.subject | GROWTH | - |
| dc.subject | H2O | - |
| dc.title | Filling performance and electrical characteristics of Al2O3 films deposited by atomic layer deposition for through-silicon via applications | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1016/J.TSF.2014.01.081 | - |
| dc.author.google | Choi, KK | - |
| dc.author.google | Kee, J | - |
| dc.author.google | Kim, SH | - |
| dc.author.google | Park, MS | - |
| dc.author.google | Park, CG | - |
| dc.author.google | Kim, DK | - |
| dc.relation.volume | 556 | - |
| dc.relation.startpage | 560 | - |
| dc.relation.lastpage | 565 | - |
| dc.contributor.id | 10069857 | - |
| dc.relation.journal | THIN SOLID FILMS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.556, pp.560 - 565 | - |
| dc.identifier.wosid | 000333085700090 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 565 | - |
| dc.citation.startPage | 560 | - |
| dc.citation.title | THIN SOLID FILMS | - |
| dc.citation.volume | 556 | - |
| dc.contributor.affiliatedAuthor | Park, CG | - |
| dc.identifier.scopusid | 2-s2.0-84896387791 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 5 | - |
| dc.description.scptc | 5 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | SURFACE-CHEMISTRY | - |
| dc.subject.keywordPlus | THIN-FILM | - |
| dc.subject.keywordPlus | CAPACITANCE | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordAuthor | Aluminum oxide | - |
| dc.subject.keywordAuthor | Atomic layer deposition | - |
| dc.subject.keywordAuthor | Through-silicon via | - |
| dc.subject.keywordAuthor | Step coverage | - |
| dc.subject.keywordAuthor | Breakdown field | - |
| dc.subject.keywordAuthor | High-k dielectrics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg