Saturation of threshold-voltage shift during positive bias temperature instability in HfSiON/SiO2 n-channel MOSFET and its effect on device lifetime evaluation
SCIE
SCOPUS
- Title
- Saturation of threshold-voltage shift during positive bias temperature instability in HfSiON/SiO2 n-channel MOSFET and its effect on device lifetime evaluation
- Authors
- Kim, C; Kim, H; Lee, S; Park, J; Kang, B
- Date Issued
- 2014-08
- Publisher
- IOP PUBLISHING LTD
- Abstract
- This paper investigates the saturation of threshold-voltage shift Delta V-th of HfSiON/SiO2 n-channel MOSFETs (nMOFSETs) under positive bias temperature instability (PBTI) and proposes an empirical PBTI degradation model that can predict operational lifetime t(L) accurately. Experimental results indicate that secondary-hole trapping occurred in the bulk dielectric due to hole injection at the anode after electron trapping in the initial bulk trap. This secondary-hole trapping causes a decrease in the time exponent n of the power law Delta V-th proportional to t(n) in as the gate stress voltage V-g,V-str increases. This dependency of n on Vg,str results in overestimation of t(L) when it was estimated using the conventional method which assumes a constant value of n. An empirical model that considers the effect of V-g,V-str on n is proposed; this model predicted operational t(L) = 2.6 x 10(5)s, which agreed well with experimentally-measured t(L) = 3.9 x 10(5)s. (C) 2014 The Japan Society of Applied Physics
- Keywords
- GATE STACKS; INTERFACE TRAPS; DIOXIDE FILMS; THIN SILICON; RELIABILITY; DIELECTRICS; STRESS; OXIDE; GENERATION; NMOSFETS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14296
- DOI
- 10.7567/JJAP.53.08LA02
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 8, page. 10 - 13, 2014-08
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