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  Department of Chemical Engineering (화학공학과) 1. Journal Papers

 

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Cited 232 time in webofscience Cited 236 time in scopus
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dc.contributor.authorRüdiger Schmidt-
dc.contributor.authorMang Mang Ling-
dc.contributor.authorOh, JH-
dc.contributor.authorMichael Winkler-
dc.contributor.authorMartin Könemann-
dc.contributor.authorZhenan Bao-
dc.contributor.authorFrank Würthner-
dc.date.accessioned2016-03-31T08:00:44Z-
dc.date.available2016-03-31T08:00:44Z-
dc.date.created2014-09-30-
dc.date.issued2007-11-05-
dc.identifier.issn0935-9648-
dc.identifier.other2007-OAK-0000030356-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/14363-
dc.description.abstractTwo core-fluorinated perylene bisimide semiconductors have been synthesized and n-channel field effect transistors have been fabricated by vapor-deposition techniques. Charge carrier mobilities as high as 0.34 cm(2)V(-1)s(-1) and unprecedented on-to-off current ratios around 10(7) have been measured for these devices in air.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.relation.isPartOfADVANCED MATERIALS-
dc.subjectCHARGE-TRANSPORT-
dc.subjectDERIVATIVES-
dc.subjectELECTRONICS-
dc.subjectCHEMISTRY-
dc.subjectCRYSTAL-
dc.subjectDESIGN-
dc.subjectACENES-
dc.titleCore-Fluorinated Perylene Bisimide Dyes: Air Stable n-Channel Organic Semiconductors for Thin Film Transistors with Exceptionally High On-to-Off Current Ratios-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1002/ADMA.200701478-
dc.author.googleSchmidt, R-
dc.author.googleLing, MM-
dc.author.googleOh, JH-
dc.author.googleWinkler, M-
dc.author.googleKonemann, M-
dc.author.googleBao, ZN-
dc.author.googleWurthner, F-
dc.relation.volume19-
dc.relation.issue21-
dc.relation.startpage3692-
dc.contributor.id10165224-
dc.relation.journalADVANCED MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.19, no.21, pp.3692 - +-
dc.identifier.wosid000250992000051-
dc.date.tcdate2019-01-01-
dc.citation.endPage+-
dc.citation.number21-
dc.citation.startPage3692-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume19-
dc.contributor.affiliatedAuthorOh, JH-
dc.identifier.scopusid2-s2.0-36248961631-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc205-
dc.description.scptc203*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusCHARGE-TRANSPORT-
dc.subject.keywordPlusDERIVATIVES-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusCHEMISTRY-
dc.subject.keywordPlusCRYSTAL-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusACENES-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
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오준학OH, JOON HAK
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