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Cited 517 time in webofscience Cited 529 time in scopus
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dc.contributor.authorYutaka Ito-
dc.contributor.authorAjay A. Virkar-
dc.contributor.authorStefan Mannsfeld-
dc.contributor.authorOh, JH-
dc.contributor.authorMichael Toney-
dc.contributor.authorJason Locklin-
dc.contributor.authorZhenan Bao-
dc.date.accessioned2016-03-31T08:00:46Z-
dc.date.available2016-03-31T08:00:46Z-
dc.date.created2014-09-30-
dc.date.issued2009-07-08-
dc.identifier.issn0002-7863-
dc.identifier.other2009-OAK-0000030354-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/14364-
dc.description.abstractCrystalline self-assembled monolayers (SAMs) of organosilane compounds such as octadecyltrimethoxysilane (OTMS) and octadecyltrichlorosilane (OTCS) were deposited by a simple, spin-casting technique onto Si/SiO2 substrates. Fabrication of the OTMS SAMs and characterization using ellipsometry, contact angle, atomic force microscopy (AFM), grazing angle attenuated total reflectance Fourier transform infrared (GATR-FTIR) spectroscopy and grazing incidence X-ray diffraction (GIXD) are described. The characterization confirms that these monolayers exhibit a well-packed crystalline phase and a remarkably high degree of smoothness. Semiconductors deposited by vapor deposition onto the crystalline OTS SAM grow in a favorable two-dimensional layered growth manner which is generally preferred morphologically for high charge carrier transport. On the OTMS SAM treated dielectric, pentacene OFETs showed hole mobilities as high as 3.0 cm(2/)V.s, while electron mobilities as high as 5.3 cm(2/)V.s were demonstrated for C-60.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.relation.isPartOfJOURNAL OF THE AMERICAN CHEMICAL SOCIETY-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectHIGH-PERFORMANCE-
dc.subjectSEMICONDUCTORS-
dc.subjectGROWTH-
dc.subjectMORPHOLOGY-
dc.subjectTRANSPORT-
dc.subjectMOBILITY-
dc.subjectACIDS-
dc.titleCrystalline Ultrasmooth Self-Assembled Monolayers of Alkylsilanes for Organic Field-Effect Transistors-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1021/JA9029957-
dc.author.googleIto, Y-
dc.author.googleVirkar, AA-
dc.author.googleMannsfeld, S-
dc.author.googleOh, JH-
dc.author.googleToney, M-
dc.author.googleLocklin, J-
dc.author.googleBao, ZA-
dc.relation.volume131-
dc.relation.issue26-
dc.relation.startpage9396-
dc.relation.lastpage9404-
dc.contributor.id10165224-
dc.relation.journalJOURNAL OF THE AMERICAN CHEMICAL SOCIETY-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.131, no.26, pp.9396 - 9404-
dc.identifier.wosid000267633300056-
dc.date.tcdate2019-01-01-
dc.citation.endPage9404-
dc.citation.number26-
dc.citation.startPage9396-
dc.citation.titleJOURNAL OF THE AMERICAN CHEMICAL SOCIETY-
dc.citation.volume131-
dc.contributor.affiliatedAuthorOh, JH-
dc.identifier.scopusid2-s2.0-67649995543-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc370-
dc.description.scptc344*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMORPHOLOGY-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusACIDS-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-

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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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