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Interplay between Energetic and Kinetic Factors on the Ambient Stability of n-Channel Organic Transistors Based on Perylene Diimide Derivatives SCIE SCOPUS

Title
Interplay between Energetic and Kinetic Factors on the Ambient Stability of n-Channel Organic Transistors Based on Perylene Diimide Derivatives
Authors
Oh, JHYa-Sen SunRüdiger SchmidtMichael F. ToneyDennis NordlundMartin KönemannFrank WürthnerZhenan Bao
Date Issued
2009-11-24
Publisher
American Chemical Society
Abstract
The effects of the interplay between energetic and kinetic factors on the air stability of n-channel organic thin-film transistors (OTFTs) were studied using two perylene diimide (PDI) compounds with distinctly different lowest unoccupied molecular orbital (LUMO) levels. On the basis of the empirical energy level windows, one compound (N,N'-bis(2,2,3,3,4,4,5,5,5-nonafluoropentyl)-3,4:9,10-tetracarboxylic acid diimide (PDI-F): -3.84 eV) is at the onset region for air stability, whereas the other (N,N'-bis(cyclohexyl)-1,7-dicyano-perylene-3,4:9,10-tetracarboxylic acid diimide (PDI-CN2): -4.33 eV) is in the air-stable region. Charge-transport behaviors under an inert atmosphere and in air were investigated as a function of active layer thickness. Charge transport in air was greatly affected by the active layer thickness for both compounds, an effect that has been overlooked so far. The ambient stability of the air-unstable PDI-F TFTs increased significantly for thicknesses over similar to 10 monolayers (ML). Surprisingly, the previously considered "air-stable" PDI-CN2 TFTs were not stable in air if the active layer thickness was less than similar to 4 ML. The molecular packing and orientation of the PDI thin Films were investigated using grazing incidence X-ray diffraction (GIXD) and near-edge X-ray absorption fine structure (NEXAFS). We found that the minimum thickness required for air stability is closely related to the LUMO level, film morphology, and film growth mode.
Keywords
THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; ABSORPTION FINE-STRUCTURE; CHARGE-TRANSPORT; SEMICONDUCTORS; MOBILITY; PENTACENE; GROWTH; ELECTRONICS; DEPENDENCE
URI
https://oasis.postech.ac.kr/handle/2014.oak/14368
DOI
10.1021/CM902531D
ISSN
0897-4756
Article Type
Article
Citation
CHEMISTRY OF MATERIALS, vol. 21, no. 22, page. 5508 - 5518, 2009-11-24
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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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