DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, YG | - |
dc.contributor.author | Kim, TK | - |
dc.contributor.author | Hwang, IC | - |
dc.contributor.author | Lee, HS | - |
dc.contributor.author | Hwang, BW | - |
dc.contributor.author | Moon, JM | - |
dc.contributor.author | Seo, YJ | - |
dc.contributor.author | Lee, SW | - |
dc.contributor.author | Jo, MH | - |
dc.contributor.author | Lee, SH | - |
dc.date.accessioned | 2016-03-31T08:04:57Z | - |
dc.date.available | 2016-03-31T08:04:57Z | - |
dc.date.created | 2014-03-26 | - |
dc.date.issued | 2014-03-12 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | 2014-OAK-0000029861 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14520 | - |
dc.description.abstract | In this study, germanium nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited enhanced electrical performance with low source/drain (S/D) contact resistance under the influence of Ar plasma treatment on the contact regions. We found that the transformation of the surface oxide states by Ar plasma treatment affected the S/D contact resistance. With Ar plasma treatment, the germanium dioxide on the GeNW surface was effectively removed and increased oxygen vacancies were formed in the suboxide on the GeNW, whose germanium-enrichment surface was obtained to form a germanide contact at low temperature. After a rapid thermal annealing process, Ni-germanide contacts were formed on the Ar-plasma-treated GeNW surface. Ni-germanide contact resistance was improved by more than an order of magnitude compared to that of the other devices without Ni-germanide contact. Moreover, the peak field effect mobility value of the GeNW-JL MOSFETs was dramatically improved from 15 cm(2)/(V s) to 550 cm(2)/(V s), and the I-on/off ratio was enhanced from 1 x 10 to 3 x 10(3) due to Ar plasma treatment. The Ar plasma treatment process is essential for forming uniform Ni-germanide-contacts with reduced time and low temperature. It is also crucial for increasing mass productivity and lowering the thermal budget without sacrificing the performance of GeNW-JL MOSFETs. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.subject | GeNW-JL | - |
dc.subject | MOSFETs | - |
dc.subject | Ar plasma treatment | - |
dc.subject | GeO2 | - |
dc.subject | suboxide | - |
dc.subject | germanide contact | - |
dc.subject | ENERGY-LOSS SPECTROSCOPY | - |
dc.subject | LIQUID-SOLID GROWTH | - |
dc.subject | THERMAL-DESORPTION | - |
dc.subject | SILICON | - |
dc.subject | OXIDE | - |
dc.subject | SURFACE | - |
dc.subject | SUBSTRATE | - |
dc.subject | TRANSISTORS | - |
dc.subject | FUTURE | - |
dc.subject | LAYERS | - |
dc.title | Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1021/AM403971X | - |
dc.author.google | Yoon, YG | - |
dc.author.google | Kim, TK | - |
dc.author.google | Hwang, IC | - |
dc.author.google | Lee, HS | - |
dc.author.google | Hwang, BW | - |
dc.author.google | Moon, JM | - |
dc.author.google | Seo, YJ | - |
dc.author.google | Lee, SW | - |
dc.author.google | Jo, MH | - |
dc.author.google | Lee, SH | - |
dc.relation.volume | 6 | - |
dc.relation.issue | 5 | - |
dc.relation.startpage | 3150 | - |
dc.relation.lastpage | 3155 | - |
dc.contributor.id | 10176415 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155 | - |
dc.identifier.wosid | 000332922900014 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3155 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3150 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 6 | - |
dc.contributor.affiliatedAuthor | Jo, MH | - |
dc.identifier.scopusid | 2-s2.0-84896338630 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 11 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THERMAL-DESORPTION | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | FUTURE | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordAuthor | GeNW-JL | - |
dc.subject.keywordAuthor | MOSFETs | - |
dc.subject.keywordAuthor | Ar plasma treatment | - |
dc.subject.keywordAuthor | GeO2 | - |
dc.subject.keywordAuthor | suboxide | - |
dc.subject.keywordAuthor | germanide contact | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
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