DC Field | Value | Language |
---|---|---|
dc.contributor.author | Saungeun Park | - |
dc.contributor.author | Sangchul Lee | - |
dc.contributor.author | Greg Mordi | - |
dc.contributor.author | Srikar Jandhyala | - |
dc.contributor.author | Min-Woo Ha | - |
dc.contributor.author | Ha, MW | - |
dc.contributor.author | Luigi Colombo | - |
dc.contributor.author | Robert M. Wallace | - |
dc.contributor.author | Byoung Hun Lee | - |
dc.contributor.author | Jiyoung Kim | - |
dc.contributor.author | Kim, J | - |
dc.date.accessioned | 2016-03-31T08:05:38Z | - |
dc.date.available | 2016-03-31T08:05:38Z | - |
dc.date.created | 2014-03-24 | - |
dc.date.issued | 2014-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2014-OAK-0000029806 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14546 | - |
dc.description.abstract | We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To minimize charge trapping, the gate-voltage scanning rate was controlled (up to 2 V/mu s) by varying the triangular-pulse rise and fall times. This method makes it possible to measure the intrinsic-like transfer characteristics of chemical vapor deposition graphene devices. The maximum electron (hole) mobility measured by a dc measurement is similar to 4800 (5200) cm(2)/Vs, whereas the maximum electron (hole) mobility measured by the triangular-pulse technique with a gate-voltage scanning rate of 0.4 V/mu s is similar to 10 600 (8500) cm(2)/Vs. For measurements with a triangular gate pulse, the shift of the Dirac voltage is less than that measured by the dc method. These results indicate that the triangular-gate-pulse measurement is a promising technique with which to determine the intrinsic properties and ambipolar transfer characteristics of GFETs. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | Ambipolar transfer characteristics | - |
dc.subject | chemical vapor deposited graphene | - |
dc.subject | charge trapping | - |
dc.subject | flexible electronics | - |
dc.subject | pulse measurement | - |
dc.subject | hysteresis | - |
dc.subject | SIO2 | - |
dc.title | Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1109/LED.2013.2294828 | - |
dc.author.google | Park, S | - |
dc.author.google | Lee, S | - |
dc.author.google | Mordi, G | - |
dc.author.google | Jandhyala, S | - |
dc.author.google | Ha, MW | - |
dc.author.google | Lee, JS | - |
dc.author.google | Colombo, L | - |
dc.author.google | Wallace, RM | - |
dc.author.google | Lee, BH | - |
dc.author.google | Kim, J | - |
dc.relation.volume | 35 | - |
dc.relation.issue | 2 | - |
dc.relation.startpage | 277 | - |
dc.relation.lastpage | 279 | - |
dc.contributor.id | 10174741 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.2, pp.277 - 279 | - |
dc.identifier.wosid | 000331377500043 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 279 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 277 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.contributor.affiliatedAuthor | Ha, MW | - |
dc.identifier.scopusid | 2-s2.0-84893865065 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Ambipolar transfer characteristics | - |
dc.subject.keywordAuthor | chemical vapor deposited graphene | - |
dc.subject.keywordAuthor | charge trapping | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | pulse measurement | - |
dc.subject.keywordAuthor | hysteresis | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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