DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rim, T | - |
dc.contributor.author | Kim, K | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Baek, CK | - |
dc.contributor.author | Meyyappan, M | - |
dc.contributor.author | Jeong, YH | - |
dc.contributor.author | Lee, JS | - |
dc.date.accessioned | 2016-03-31T08:05:40Z | - |
dc.date.available | 2016-03-31T08:05:40Z | - |
dc.date.created | 2014-03-09 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2013-OAK-0000029804 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14547 | - |
dc.description.abstract | Ion-sensitive field-effect transistors (ISFETs) with a honeycomb nanowire (HCNW) structure have been fabricated on a silicon-on-insulator wafer. The HCNW ISFET shows lower threshold voltage, lower subthreshold swing, higher drain current, and lower variability than the conventional nanowire device. Improved electrical characteristics are mainly due to the increased effective channel width and enhanced current drivability. The HCNW structure also exhibits improved current sensitivity in its pH response. These results suggest that the HCNW structure is promising for enhancing device performance and realizing sensors with high sensitivity. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | Improved Electrical Characteristics of Honeycomb-Nanowire ISFETs | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1109/LED.2013.2265391 | - |
dc.author.google | Kang, SH | - |
dc.author.google | Kim, IW | - |
dc.author.google | Jeong, YH | - |
dc.author.google | Koo, TY | - |
dc.relation.volume | 34 | - |
dc.relation.issue | 8 | - |
dc.relation.startpage | 1059 | - |
dc.relation.lastpage | 1061 | - |
dc.contributor.id | 10084860 | - |
dc.relation.journal | IEEE Electron Devices Letters | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.8, pp.1059 - 1061 | - |
dc.identifier.wosid | 000323911800042 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1061 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1059 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 34 | - |
dc.contributor.affiliatedAuthor | Baek, CK | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-84881025269 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.description.scptc | 12 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | IMMUNODETECTION | - |
dc.subject.keywordPlus | ELECTRODE | - |
dc.subject.keywordAuthor | Honeycomb nanowire structure (HCNW) | - |
dc.subject.keywordAuthor | ion-sensitive field-effect transistor (ISFET) | - |
dc.subject.keywordAuthor | pH sensing | - |
dc.subject.keywordAuthor | silicon nanowire | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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