Open Access System for Information Sharing

Login Library

 

Article
Cited 5 time in webofscience Cited 5 time in scopus
Metadata Downloads

Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes SCIE SCOPUS

Title
Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes
Authors
Seung Cheol HanKim, JKJun Young KimDong Min LeeJae-Sik YoonKim, JKE. Fred SchubertJi-Myon Lee
Date Issued
2013-08
Publisher
American Scientific Publishers
Abstract
The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 Omega cm(2) to 9.05 x 10(-3) Omega cm(2) for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature. However, the specific contact resistance could be decreased down to 1.03 x 10(-4) Omega cm(2) by means of surface treatment using an alcohol-based (NH4)(2)S solution. The depth profile data measured from the intensity of O1s peak in the X-ray photoemission spectra showed That the alcohol-based (NH4)(2)S treatment was effective in removing the surface oxide layer of GaN.
Keywords
N-Face p-GaN; LED; Surface Treatment; XPS; SINGLE-CRYSTAL GAN; SURFACE-TREATMENT; LOW-RESISTANCE
URI
https://oasis.postech.ac.kr/handle/2014.oak/14610
DOI
10.1166/JNN.2013.7072
ISSN
1533-4880
Article Type
Article
Citation
Journal of Nanoscience and Nanotechnology, vol. 13, no. 8, page. 5715 - 5718, 2013-08
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse