Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes
SCIE
SCOPUS
- Title
- Ohmic contacts to N-face p-GaN using Ni/Au for the fabrication of polarization inverted light-emitting diodes
- Authors
- Seung Cheol Han; Kim, JK; Jun Young Kim; Dong Min Lee; Jae-Sik Yoon; Kim, JK; E. Fred Schubert; Ji-Myon Lee
- Date Issued
- 2013-08
- Publisher
- American Scientific Publishers
- Abstract
- The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 Omega cm(2) to 9.05 x 10(-3) Omega cm(2) for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature. However, the specific contact resistance could be decreased down to 1.03 x 10(-4) Omega cm(2) by means of surface treatment using an alcohol-based (NH4)(2)S solution. The depth profile data measured from the intensity of O1s peak in the X-ray photoemission spectra showed That the alcohol-based (NH4)(2)S treatment was effective in removing the surface oxide layer of GaN.
- Keywords
- N-Face p-GaN; LED; Surface Treatment; XPS; SINGLE-CRYSTAL GAN; SURFACE-TREATMENT; LOW-RESISTANCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14610
- DOI
- 10.1166/JNN.2013.7072
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- Journal of Nanoscience and Nanotechnology, vol. 13, no. 8, page. 5715 - 5718, 2013-08
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- There are no files associated with this item.
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