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Cited 5 time in webofscience Cited 5 time in scopus
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dc.contributor.authorSon, JY-
dc.contributor.authorLee, JH-
dc.contributor.authorJang, HM-
dc.date.accessioned2016-03-31T08:07:33Z-
dc.date.available2016-03-31T08:07:33Z-
dc.date.created2014-03-20-
dc.date.issued2013-09-02-
dc.identifier.issn0003-6951-
dc.identifier.other2013-OAK-0000029646-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/14616-
dc.description.abstractIn its pure unstressed form, SrTiO3 (STO) remains quantum paraelectric down to 0 K. Herein, we demonstrate the ferroelectric STO nanodots array embodied by exploiting the idea of oxygen-vacancy-promoted ferroelectricity. First-principles calculations clearly support this idea. To practically activate the oxygen vacancies needed for the revelation of room-temperature ferroelectricity, we have applied an ac-bias field with various switching cycles at a conducting atomic-force-microscope tip. The STO nanodots with optimum polarization-switching characteristics have been implemented by suitably trading-off between the oxygen-vacancy-promoted polarization and the increasing leakage current with the switching cycle. (C) 2013 AIP Publishing LLC.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAIP-
dc.relation.isPartOfApplied Physical Lett-
dc.subjectORDER-PARAMETER SATURATION-
dc.subjectTHIN-FILMS-
dc.subjectPOLARIZATION-
dc.subjectTRANSITION-
dc.subjectPEROVSKITES-
dc.subjectFATIGUE-
dc.titleRoom-temperature ferroelectricity in SrTiO3 nanodots array formed by an ac-bias field-
dc.typeArticle-
dc.contributor.college첨단재료과학부-
dc.identifier.doi10.1063/1.4820407-
dc.author.googleSon, JY-
dc.author.googleLee, JH-
dc.author.googleJang, HM-
dc.relation.volume103-
dc.relation.startpage102901-
dc.relation.lastpage102901-
dc.contributor.id10084272-
dc.relation.journalApplied Physical Lett-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationApplied Physical Lett, v.103, no.10, pp.102901 - 102901-
dc.identifier.wosid000324389700043-
dc.date.tcdate2019-01-01-
dc.citation.endPage102901-
dc.citation.number10-
dc.citation.startPage102901-
dc.citation.titleApplied Physical Lett-
dc.citation.volume103-
dc.contributor.affiliatedAuthorJang, HM-
dc.identifier.scopusid2-s2.0-84884229507-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc1-
dc.description.scptc1*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusORDER-PARAMETER SATURATION-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusPOLARIZATION-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusPEROVSKITES-
dc.subject.keywordPlusFATIGUE-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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장현명JANG, HYUN MYUNG
Div of Advanced Materials Science
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