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Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation SCIE SCOPUS
- Title
- Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation
- Authors
- Baek, CK; DaeGun Kang; JeongSik Kim; Jin, B; Taiuk Rim; Sooyoung Park; Meyya Meyyappan; Jeong, YH; Jeong-Soo Lee
- Date Issued
- 2013-02
- Publisher
- Elsevier
- Abstract
- The resistive switching and low frequency noise characteristics in In2Se3 nanowire PRAM devices with SiO2 passivation have been studied. The SiO2 passivation of the nanowires was adopted to lessen the thermal energy dissipation to the surroundings and as a result, the set/reset voltages and the corresponding power requirements have been reduced. The measured low frequency noise characteristics exhibit a typical 1/f noise behavior and show the same noise level after the SiO2 passivation. (C) 2012 Elsevier Ltd. All rights reserved.
- Keywords
- In2Se3 nanowire; Phase change memory; SiO2 passivation; Chalcogenide; Low frequency noise; DEVICES
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- Solid-State Electronics, vol. 80, page. 10 - 13, 2013-02
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- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg