New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High-k/Metal-Gate nMOSFETs

Abstract

The hot-carrier (HC) effect in high-k/metal-gate nMOSFETs is characterized using radio-frequency (RF) small-signal parameter analysis. To explain a novel HC degradation of RF small-signal parameters, we propose a modified surface channel resistance model that can be applied to not only conventional SiO(2)/poly-Si-gate nMOSFETs but also high-k/metal-gate nMOSFETs.