An Analysis of the Field Dependence of Interface Trap Generation under Negative Bias Temperature Instability Stress using Wentzel- Kramers Brillouin with Density Gradient Method

Abstract

In this paper, the Si-H bond dissociation rate is calculated under a negative bias temperature instability (NBTI) condition that considers the quantum effect on the hole density in the inversion layer of a metal-oxide-semiconductor field-effect transistor (MOSFET). The physical model used in this study is composed of two terms: the number of holes in that Si-H bond, and the polarization of the Si-H bond under an external electric field. By adopting a density-gradient (DG) method with a penetration boundary condition and the Wentzel-Kramers-Brillouin (WKB) approximation, the penetrated hole density profile in the gate oxide and the tendency towards the hole amount in the Si-H bond according to the electric field have been identified and compared with other works. The results show that the NBTI field dependence and the lifetime of the devices under NBTI stress correlate to the power-law dependency. (C) 2011 The Japan Society of Applied Physics