DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, RH | - |
dc.contributor.author | BAEK, CHANG KI | - |
dc.contributor.author | Choi, HS | - |
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Yeoh, YY | - |
dc.contributor.author | Yeo, KH | - |
dc.contributor.author | Kim, DW | - |
dc.contributor.author | Kim, K | - |
dc.contributor.author | Kim, DM | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-03-31T08:11:07Z | - |
dc.date.available | 2016-03-31T08:11:07Z | - |
dc.date.created | 2011-08-12 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.other | 2011-OAK-0000029374 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/14747 | - |
dc.description.abstract | In this paper, the volume trap densities N(t) are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting N(t), the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/f noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/f model developed is discussed. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.title | Characterization and Modeling of 1/f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides | - |
dc.type | Article | - |
dc.contributor.college | 창의IT융합공학과 | - |
dc.identifier.doi | 10.1109/TNANO.2010.2044188 | - |
dc.author.google | Baek, RH | - |
dc.author.google | Baek, CK | - |
dc.author.google | Choi, HS | - |
dc.author.google | Lee, JS | - |
dc.author.google | Yeoh, YY | - |
dc.author.google | Yeo, KH | - |
dc.author.google | Kim, DW | - |
dc.author.google | Kim, K | - |
dc.author.google | Kim, DM | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 10 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 417 | - |
dc.relation.lastpage | 423 | - |
dc.contributor.id | 10644344 | - |
dc.relation.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.10, no.3, pp.417 - 423 | - |
dc.identifier.wosid | 000292963500008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 423 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 417 | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.contributor.affiliatedAuthor | Baek, RH | - |
dc.contributor.affiliatedAuthor | BAEK, CHANG KI | - |
dc.contributor.affiliatedAuthor | Lee, JS | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-79955879936 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 15 | - |
dc.description.scptc | 17 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Flicker noise | - |
dc.subject.keywordAuthor | gate-all-around (GAA) FET | - |
dc.subject.keywordAuthor | 1/f | - |
dc.subject.keywordAuthor | quantum wire | - |
dc.subject.keywordAuthor | series resistance R-sd | - |
dc.subject.keywordAuthor | twin silicon nanowire FET (TSNWFET) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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