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Cited 101 time in webofscience Cited 103 time in scopus
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dc.contributor.authorKang, B-
dc.contributor.authorLim, S-
dc.contributor.authorLee, WH-
dc.contributor.authorJo, SB-
dc.contributor.authorCho, K-
dc.date.accessioned2016-03-31T08:12:42Z-
dc.date.available2016-03-31T08:12:42Z-
dc.date.created2014-02-21-
dc.date.issued2013-11-
dc.identifier.issn0935-9648-
dc.identifier.other2013-OAK-0000029274-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/14805-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWiley-VCH-
dc.relation.isPartOfAdvanced Materials-
dc.titleWork-function-tuned reduced graphene oxide via direct surface functionalization as source/drain electrodes in bottom-contact organic transistors-
dc.typeArticle-
dc.contributor.college화학공학과-
dc.identifier.doi10.1002/ADMA.201302358-
dc.author.googleKang, B-
dc.author.googleLim, S-
dc.author.googleLee, WH-
dc.author.googleJo, SB-
dc.author.googleCho, K-
dc.relation.volume25-
dc.relation.issue41-
dc.relation.startpage5858-
dc.relation.lastpage5862-
dc.contributor.id10077904-
dc.relation.journalADVANCED MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAdvanced Materials, v.25, no.41, pp.5856 - 5862-
dc.identifier.wosid000327692900002-
dc.date.tcdate2019-01-01-
dc.citation.endPage5862-
dc.citation.number41-
dc.citation.startPage5856-
dc.citation.titleAdvanced Materials-
dc.citation.volume25-
dc.contributor.affiliatedAuthorJo, SB-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-84887109799-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc52-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusSOLVENT-
dc.subject.keywordPlusCHANNEL-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordAuthorgraphene oxide-
dc.subject.keywordAuthorself-assembled monolayers-
dc.subject.keywordAuthororganic field-effect transistors-
dc.subject.keywordAuthordoping of RGO-
dc.subject.keywordAuthorwork-function engineering-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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