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Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs SCIE SCOPUS
- Title
- Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs
- Authors
- Park, MS; Kim, Y; Lee, KT; Kang, CY; Min, BG; Oh, J; Majhi, P; Tseng, HH; Lee, JC; Banerjee, SK; Lee, JS; Jammy, R; Jeong, YH
- Date Issued
- 2013-12
- Publisher
- Elsevier
- Abstract
- The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good I-on/I-off ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCl) degradation is worsened, especially in Ge PAI samples. The results suggest that HCl is an important factor in limiting device life time in Si/SiGe channel pMOSFETs. (C) 2013 Elsevier B.V. All rights reserved.
- Keywords
- Si/SiGe channel; Pre-amorphization; HCl; NBTI; Boron diffusion; GERMANIUM; ACTIVATION; MOSFETS
- ISSN
- 0167-9317
- Article Type
- Article
- Citation
- Microelectronic engineering, vol. 112, page. 80 - 83, 2013-12
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg