Open Access System for Information Sharing

Login Library

 

Article
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress SCIE SCOPUS

Title
Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress
Authors
Choi, DYSohn, CWSagong, HCJung, EYKang, CYLee, JSJeong, YH
Date Issued
2013-04
Publisher
IOP PUBLISHING LTD
Abstract
This paper describes the degradation and recovery characteristics of SiGe pMOSFETs with a high-k/metal gate stack under negative-bias temperature instability (NBTI) stress. The threshold voltage instability (Delta V-th) of SiGe pMOSFETs shows an increased percentage of recovery (R) as well as lower degradation than those of control Si pMOSFETs. It is found that the recovery characteristics of SiGe and Si pMOSFETs have similar dependencies on various stress conditions, and the increased R of SiGe pMOSFETs is mainly attributed to their lower degradation characteristic. Under real operating conditions, most of the Delta V-th caused by hole trapping would be rapidly recovered through a fast recovery process, and newly-generated interface traps during the stress would determine the degradation level of V-th. The SiGe pMOSFETs show lower stress-induced interface traps; thus, they would display more reliable NBTI characteristics than Si pMOSFETs under real operating conditions. (C) 2013 The Japan Society of Applied Physics
Keywords
GATE; RELIABILITY; IMPACT; LAYER; PERFORMANCE; DIELECTRICS; THICKNESS; PMOSFETS
URI
https://oasis.postech.ac.kr/handle/2014.oak/14897
DOI
10.7567/JJAP.52.04CC21
ISSN
0021-4922
Article Type
Article
Citation
Japanese Journal of Applied Physics, vol. 52, no. 4, page. 4CC21-1 - 4CC21-4, 2013-04
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

정윤하JEONG, YOON HA
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse