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Defect Engineering Using Bilayer Structure in Filament-Type RRAM SCIE SCOPUS
- Title
- Defect Engineering Using Bilayer Structure in Filament-Type RRAM
- Date Issued
- 2013-10
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.
- Keywords
- Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM); MODEL
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 10, page. 1250 - 1252, 2013-10
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Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg