Defect Engineering Using Bilayer Structure in Filament-Type RRAM
SCIE
SCOPUS
- Title
- Defect Engineering Using Bilayer Structure in Filament-Type RRAM
- Authors
- Lee, D; Woo, J; Cha, E; Park, S; Lee, S; Park, J; Hwang, H
- Date Issued
- 2013-10
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.
- Keywords
- Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM); MODEL
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14930
- DOI
- 10.1109/LED.2013.2279009
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 34, no. 10, page. 1250 - 1252, 2013-10
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.