Selector-less RRAM with non-linearity of device for cross-point array applications

Abstract

We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation cur, rents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiOx/TiOy bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents. (C) 2013 Elsevier B.V. All rights reserved.