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Al diffusion in ZnO Nanowalls Investigated by Atom Probe Tomography SCIE SCOPUS KCI

Title
Al diffusion in ZnO Nanowalls Investigated by Atom Probe Tomography
Authors
SungMin ParkWooYoung JunfPark, C
Date Issued
2013-09
Publisher
Metals and Materials Inter.
Abstract
Synthesis of ZnO nanowall structures using Ni catalyst was studied. ZnO nanowalls were grown by vapour-liquid-solid method. Ni as being a catalyst in the formation of ZnO nanowalls provided nucleation sites for the nucleation and the growth of ZnO nanowalls. Even though the sapphire system with ZnO has the high stability, the reactions between ZnO nanowalls and the sapphire substrate formed a 10-nm-thick interlayer during ZnO nanowall growth. Moreover, during the growth of the ZnO nanowalls, diffusion of Ni and Al was not expected as the Ni-Sapphire system is known to be non-reactive. Atom-probe tomography revealed that Al and Ni diffused into the NiO interface and sapphire substrate. Al diffused along the interface generated by the growth of ZnO nanowall, but Ni diffused into the interlayer between ZnO and sapphire.
Keywords
optoelectronic materials; crystal growth; diffusion; atom probe tomography; OXIDE NANOWIRE ARRAYS; ZINC-OXIDE; OPTICAL-PROPERTIES; THIN-FILMS; GROWTH
URI
https://oasis.postech.ac.kr/handle/2014.oak/14986
DOI
10.1007/S12540-013-5029-8
ISSN
1598-9623
Article Type
Article
Citation
Metals and Materials Inter., vol. 19, no. 5, page. 1117 - 1121, 2013-09
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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