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dc.contributor.authorJae Hoon Kim-
dc.contributor.authorKim, YH-
dc.date.accessioned2016-03-31T08:24:05Z-
dc.date.available2016-03-31T08:24:05Z-
dc.date.created2013-12-17-
dc.date.issued2013-09-
dc.identifier.issn0026-2692-
dc.identifier.other2013-OAK-0000028412-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/15221-
dc.description.abstractThis paper presents an efficient approach to statistical leakage analysis (SLA) that can estimate the arbitrary n-sigma leakage currents of the VLSI system for the probability density function (PDF) of a lognormal distribution. Unlike existing SLA approaches, the proposed method uses deterministic cell leakage models and gate-level deterministic leakage analysis, and thus, provides significantly reduced analysis complexity. Providing the n-sigma chip leakage current for the PDF of WM-based SLA with a computational complexity of O(N), where N is the number of cells in a chip, the proposed approach is a promising candidate for the analysis of recent technology (comprising billions of logic cells in a chip) to address the high-complexity of conventional approaches to SLA. Compared to conventional WM-based SLA, when the value of n was 5.1803, 3.6022, and 2.8191, the average absolute errors of n-sigma chip leakage current exhibited by the proposed approach were 5.08%, 4.73%, and 4.45%, respectively. (C) 2013 Elsevier Ltd. All rights reserved.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.relation.isPartOfMicroelectronics Journal-
dc.subjectWilkinson&apos-
dc.subjects method-
dc.subjectComputational complexity-
dc.subjectGate-level deterministic leakage analysis-
dc.subjectPARAMETRIC YIELD ESTIMATION-
dc.subjectVARIABILITY-
dc.subjectPOWER-
dc.titleEfficient statistical leakage analysis using deterministic cell leakage models-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1016/J.MEJO.2013.06.014-
dc.author.googleKim, JH-
dc.author.googleKim, YH-
dc.relation.volume44-
dc.relation.issue9-
dc.relation.startpage764-
dc.relation.lastpage773-
dc.contributor.id10176127-
dc.relation.journalMicroelectronics Journal-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCIE-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationMicroelectronics Journal, v.44, no.9, pp.764 - 773-
dc.identifier.wosid000325906800005-
dc.date.tcdate2018-03-23-
dc.citation.endPage773-
dc.citation.number9-
dc.citation.startPage764-
dc.citation.titleMicroelectronics Journal-
dc.citation.volume44-
dc.contributor.affiliatedAuthorKim, YH-
dc.identifier.scopusid2-s2.0-84884499117-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.scptc0*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordAuthorWilkinson&apos-
dc.subject.keywordAuthors method-
dc.subject.keywordAuthorComputational complexity-
dc.subject.keywordAuthorGate-level deterministic leakage analysis-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-

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김영환KIM, YOUNG HWAN
Dept of Electrical Enginrg
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