Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors

Abstract

Highly stable fluorine-rich polymer dielectrics were fabricated using cross-linked poly(3-(hexafluoro-2-hydroxyl) propyl) styrene (PFS), which shows excellent electrical stability, good adhesive surface properties, and good wettability on deposited solution-processed materials. Solution-processed triethylsilylethynyl anthradithiophene (TES-ADT) could be deposited onto the cross-linked PFS dielectrics to yield highly ordered crystalline structured films that did not delaminate. The field-effect mobilities were as high as 0.56 cm(2) V-1 s(-1), and negligible hysteresis was observed in the organic field-effect transistors (OFETs). The threshold voltage, the ON/OFF ratio, and the subthreshold slope were -0.043 V, similar to 10(7), and -0.3 V per decade, respectively. The OFETs demonstrated excellent device reliability under gate-bias stress conditions due to the presence of highly stable fluorine groups in the cross-linked PFS dielectrics.