DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jiye Kim | - |
dc.contributor.author | Se Hyun Kim | - |
dc.contributor.author | Tae Kyu An | - |
dc.contributor.author | Seonuk Park | - |
dc.contributor.author | Park, CE | - |
dc.date.accessioned | 2016-03-31T08:32:33Z | - |
dc.date.available | 2016-03-31T08:32:33Z | - |
dc.date.created | 2013-04-15 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.other | 2013-OAK-0000027522 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15540 | - |
dc.description.abstract | Highly stable fluorine-rich polymer dielectrics were fabricated using cross-linked poly(3-(hexafluoro-2-hydroxyl) propyl) styrene (PFS), which shows excellent electrical stability, good adhesive surface properties, and good wettability on deposited solution-processed materials. Solution-processed triethylsilylethynyl anthradithiophene (TES-ADT) could be deposited onto the cross-linked PFS dielectrics to yield highly ordered crystalline structured films that did not delaminate. The field-effect mobilities were as high as 0.56 cm(2) V-1 s(-1), and negligible hysteresis was observed in the organic field-effect transistors (OFETs). The threshold voltage, the ON/OFF ratio, and the subthreshold slope were -0.043 V, similar to 10(7), and -0.3 V per decade, respectively. The OFETs demonstrated excellent device reliability under gate-bias stress conditions due to the presence of highly stable fluorine groups in the cross-linked PFS dielectrics. | - |
dc.description.statementofresponsibility | X | - |
dc.language | Egyptian | - |
dc.publisher | ROYAL SOC CHEM | - |
dc.relation.isPartOf | JOURAL OF MATERIALS CHEMISTRY C | - |
dc.subject | GATE-DIELECTRICS | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | PENTACENE | - |
dc.subject | FACILE | - |
dc.title | Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1039/C2TC00280A | - |
dc.author.google | Kim, J | - |
dc.author.google | Kim, SH | - |
dc.author.google | An, TK | - |
dc.author.google | Park, S | - |
dc.author.google | Park, CE | - |
dc.relation.volume | 1 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 1272 | - |
dc.relation.lastpage | 1278 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | JOURAL OF MATERIALS CHEMISTRY C | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURAL OF MATERIALS CHEMISTRY C, v.1, no.6, pp.1272 - 1278 | - |
dc.identifier.wosid | 000314804900030 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1278 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1272 | - |
dc.citation.title | JOURAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 1 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84876406918 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 25 | - |
dc.description.scptc | 23 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | FACILE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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