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Cited 2 time in webofscience Cited 2 time in scopus
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dc.contributor.authorGu, GH-
dc.contributor.authorPark, SM-
dc.contributor.authorPark, CG-
dc.date.accessioned2016-03-31T08:39:58Z-
dc.date.available2016-03-31T08:39:58Z-
dc.date.created2013-03-15-
dc.date.issued2012-06-
dc.identifier.issn1598-9623-
dc.identifier.other2012-OAK-0000027096-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/15777-
dc.description.abstractEffects of vacuum conditions on the oxygen content and microstructure of Mo layers used with Cu gate lines as thin-film transistor-liquid crystal display diffusion barriers were investigated. Mo was deposited using ion-beam sputtering at 1.0 x 10(-5) and 7.0 x 10(-7) Torr. The Mo layer oxygen content and the microstructure and changes in chemical composition of the Cu/Mo/SiO2/Si layer during annealing were examined. The Mo layer microstructure was influenced by oxygen; increasing concentration increased the energy required for secondary grain growth. Growth was suppressed at high oxygen levels. Therefore, diffusion barrier performance is enhanced by finer Mo layer grain sizes.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherHANRIMWON PUBLISHING CO,.-
dc.relation.isPartOfMETALS AND MATERIALS INTERNATIONAL-
dc.subjectthin films-
dc.subjectcrystal growth-
dc.subjectdiffusion-
dc.subjectcrystal structure-
dc.subjecttransmission electron microscopy (TEM)-
dc.subjectTHIN-FILMS-
dc.subjectCOPPER-
dc.subjectOXIDATION-
dc.subjectAL-
dc.subjectSI-
dc.subjectRELIABILITY-
dc.subjectMETALS-
dc.subjectTA-
dc.titleImpurity-controlled Mo films as diffusion barriers for Cu metallization-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1007/S12540-012-3021-3-
dc.author.googleGu, GH-
dc.author.googlePark, SM-
dc.author.googlePark, CG-
dc.relation.volume18-
dc.relation.issue3-
dc.relation.startpage517-
dc.relation.lastpage520-
dc.contributor.id10069857-
dc.relation.journalMETALS AND MATERIALS INTERNATIONAL-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationMETALS AND MATERIALS INTERNATIONAL, v.18, no.3, pp.517 - 520-
dc.identifier.wosid000305689900021-
dc.date.tcdate2019-01-01-
dc.citation.endPage520-
dc.citation.number3-
dc.citation.startPage517-
dc.citation.titleMETALS AND MATERIALS INTERNATIONAL-
dc.citation.volume18-
dc.contributor.affiliatedAuthorPark, CG-
dc.identifier.scopusid2-s2.0-84863819680-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.description.scptc1*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusCOPPER-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordPlusAL-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusSIZE-
dc.subject.keywordPlusTA-
dc.subject.keywordAuthorthin films-
dc.subject.keywordAuthorcrystal growth-
dc.subject.keywordAuthordiffusion-
dc.subject.keywordAuthorcrystal structure-
dc.subject.keywordAuthortransmission electron microscopy (TEM)-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-

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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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