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Cited 30 time in webofscience Cited 30 time in scopus
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dc.contributor.authorPark, S-
dc.contributor.authorJung, S-
dc.contributor.authorSiddik, M-
dc.contributor.authorJo, M-
dc.contributor.authorPark, J-
dc.contributor.authorKim, S-
dc.contributor.authorLee, W-
dc.contributor.authorShin, J-
dc.contributor.authorLee, D-
dc.contributor.authorChoi, G-
dc.contributor.authorWoo, J-
dc.contributor.authorCha, E-
dc.contributor.authorLee, BH-
dc.contributor.authorHwang, H-
dc.date.accessioned2016-03-31T08:40:36Z-
dc.date.available2016-03-31T08:40:36Z-
dc.date.created2013-03-08-
dc.date.issued2012-11-
dc.identifier.issn1862-6254-
dc.identifier.other2012-OAK-0000027050-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/15800-
dc.description.abstractWe propose a selector-less Pr0.7Ca0.3MnO3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Phi(eff)), i.e., self-formed Schottky barrier. In addition, a scalable 4F(2) selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherWiley-VCH Verlag.-
dc.relation.isPartOfPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS-
dc.subjectcross-point memory-
dc.subjectSchottky barrier-
dc.subjectPr0.7Ca0.3MnO3-
dc.subjectmanganites-
dc.subjectresistive switching-
dc.subjectRRAM-
dc.subjectHIGH-DENSITY-
dc.titleSelf-formed Schottky barrier induced selector-less RRAM for cross-point memory applications-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1002/PSSR.201206382-
dc.author.googlePark, S-
dc.author.googleJung, S-
dc.author.googleSiddik, M-
dc.author.googleJo, M-
dc.author.googlePark, J-
dc.author.googleKim, S-
dc.author.googleLee, W-
dc.author.googleShin, J-
dc.author.googleLee, D-
dc.author.googleChoi, G-
dc.author.googleWoo, J-
dc.author.googleCha, E-
dc.author.googleLee, BH-
dc.author.googleHwang, H-
dc.relation.volume6-
dc.relation.issue11-
dc.relation.startpage454-
dc.relation.lastpage456-
dc.contributor.id10079928-
dc.relation.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.454 - 456-
dc.identifier.wosid000311108200019-
dc.date.tcdate2019-01-01-
dc.citation.endPage456-
dc.citation.number11-
dc.citation.startPage454-
dc.citation.titlePHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS-
dc.citation.volume6-
dc.contributor.affiliatedAuthorHwang, H-
dc.identifier.scopusid2-s2.0-84869123167-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc20-
dc.description.scptc19*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordAuthorcross-point memory-
dc.subject.keywordAuthorSchottky barrier-
dc.subject.keywordAuthorPr0.7Ca0.3MnO3-
dc.subject.keywordAuthormanganites-
dc.subject.keywordAuthorresistive switching-
dc.subject.keywordAuthorRRAM-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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