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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, X | - |
| dc.contributor.author | Sadaf, SM | - |
| dc.contributor.author | Son, M | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Shin, J | - |
| dc.contributor.author | Lee, W | - |
| dc.contributor.author | Seo, K | - |
| dc.contributor.author | Lee, D | - |
| dc.contributor.author | Hwang, H | - |
| dc.date.accessioned | 2016-03-31T08:42:05Z | - |
| dc.date.available | 2016-03-31T08:42:05Z | - |
| dc.date.created | 2013-03-08 | - |
| dc.date.issued | 2012-02 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.other | 2012-OAK-0000026959 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/15856 | - |
| dc.description.abstract | To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | IEEE Electron Devices Society | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.subject | Crosspoint memory | - |
| dc.subject | niobium oxide | - |
| dc.subject | nonvolatile memory | - |
| dc.subject | resistive switching (RS) | - |
| dc.subject | threshold switching (TS) | - |
| dc.subject | POLYCRYSTALLINE NB2O5 | - |
| dc.subject | NEGATIVE-RESISTANCE | - |
| dc.subject | NONVOLATILE MEMORY | - |
| dc.subject | OXIDE FILMS | - |
| dc.title | Co-occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | - |
| dc.identifier.doi | 10.1109/LED.2011.2174452 | - |
| dc.author.google | Liu, X | - |
| dc.author.google | Sadaf, SM | - |
| dc.author.google | Son, M | - |
| dc.author.google | Park, J | - |
| dc.author.google | Shin, J | - |
| dc.author.google | Lee, W | - |
| dc.author.google | Seo, K | - |
| dc.author.google | Lee, D | - |
| dc.author.google | Hwang, H | - |
| dc.relation.volume | 33 | - |
| dc.relation.issue | 2 | - |
| dc.relation.startpage | 236 | - |
| dc.relation.lastpage | 238 | - |
| dc.contributor.id | 10079928 | - |
| dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.2, pp.236 - 238 | - |
| dc.identifier.wosid | 000299812300036 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 238 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 236 | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 33 | - |
| dc.contributor.affiliatedAuthor | Hwang, H | - |
| dc.identifier.scopusid | 2-s2.0-84856295388 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 33 | - |
| dc.description.scptc | 33 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | Crosspoint memory | - |
| dc.subject.keywordAuthor | niobium oxide | - |
| dc.subject.keywordAuthor | nonvolatile memory | - |
| dc.subject.keywordAuthor | resistive switching (RS) | - |
| dc.subject.keywordAuthor | threshold switching (TS) | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
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- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg