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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, D | - |
| dc.contributor.author | Lee, S | - |
| dc.contributor.author | Kim, C | - |
| dc.contributor.author | Lee, C | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Kang, B | - |
| dc.date.accessioned | 2016-03-31T08:46:12Z | - |
| dc.date.available | 2016-03-31T08:46:12Z | - |
| dc.date.created | 2013-02-28 | - |
| dc.date.issued | 2012-09 | - |
| dc.identifier.issn | 0026-2714 | - |
| dc.identifier.other | 2012-OAK-0000026615 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16009 | - |
| dc.description.abstract | Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is investigated. CHC stress generates negative oxide charges while GIDL stress generates positive oxide charges in the gate oxide near drain region. Theses oxide charges degrade device reliability, and degradation is enhanced when CHC stress and GIDL stress are applied alternatively. The degradation under CHC/GIDL alternating stress is due to the neutral traps and interface traps, and increases with the increase in frequency. (C) 2012 Elsevier Ltd. All rights reserved. | - |
| dc.description.statementofresponsibility | X | - |
| dc.language | English | - |
| dc.publisher | Elsvier SCIENCE BV | - |
| dc.relation.isPartOf | Microelectronics Reliability | - |
| dc.subject | DIELECTRIC STACKS | - |
| dc.subject | HFSION | - |
| dc.subject | HFO2 | - |
| dc.title | Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | - |
| dc.identifier.doi | 10.1016/J.MICROREL.2012.06.011 | - |
| dc.author.google | Kim, D | - |
| dc.author.google | Lee, S | - |
| dc.author.google | Kim, C | - |
| dc.author.google | Lee, C | - |
| dc.author.google | Park, J | - |
| dc.author.google | Kang, B | - |
| dc.contributor.id | 10071834 | - |
| dc.relation.journal | Microelectronics Reliability | - |
| dc.relation.index | SCI급, SCOPUS 등재논문 | - |
| dc.relation.sci | SCI | - |
| dc.collections.name | Journal Papers | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | Microelectronics Reliability, v.52, no.9-10, pp.1901 - 1904 | - |
| dc.identifier.wosid | 000309785400028 | - |
| dc.date.tcdate | 2018-03-23 | - |
| dc.citation.endPage | 1904 | - |
| dc.citation.number | 9-10 | - |
| dc.citation.startPage | 1901 | - |
| dc.citation.title | Microelectronics Reliability | - |
| dc.citation.volume | 52 | - |
| dc.contributor.affiliatedAuthor | Kang, B | - |
| dc.identifier.scopusid | 2-s2.0-84866731880 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.scptc | 0 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Physics | - |
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- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg