DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, NH | - |
dc.contributor.author | Kim, HW | - |
dc.contributor.author | Kang, B | - |
dc.date.accessioned | 2016-03-31T08:46:15Z | - |
dc.date.available | 2016-03-31T08:46:15Z | - |
dc.date.created | 2013-02-28 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2012-OAK-0000026613 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16011 | - |
dc.description.abstract | This paper investigates the impact of dynamic stress on the reliability of a nanoscale n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) with a SiON gate dielectric operating in a complementary metal-oxide-semiconductor (CMOS) inverter at an elevated temperature T. Experimental results indicate that the shift of threshold voltage V-th by dynamic stress is much larger than that by various static stresses in short channel nMOSFETs. Under a dynamic stress, the OFF-state stress generated interface traps and unfilled electron traps because of the OFF-state hot carrier effect due to drain induced barrier lowering (DIBL) at high T. Although the subsequent ON-state did not produce any new defects, it filled the electron traps, which increased the V-th abruptly. Consecutive application of OFF-and ON-state stresses caused a buildup of recoverable and permanent electron traps, and interface traps, thereby resulting in the significant increase in V-th. In addition, the dynamic stress degradation was frequency-independent up to 500 kHz and its impact on nMOSFET lifetime depends strongly on gate lengths. These results indicate that OFF-state induced defects are the main cause for dynamic stress degradation and can impose a significant limitation on CMOS device scaling. (C) 2012 The Japan Society of Applied Physics | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | The Japan Society of Applied Physics | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.subject | HOT-CARRIER DEGRADATION | - |
dc.subject | VOLTAGE | - |
dc.subject | INSTABILITY | - |
dc.subject | ELECTRON | - |
dc.subject | STACKS | - |
dc.title | Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal--Oxide--Semiconductor Inverter at Elevated Temperature | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1143/JJAP.51.02BC13 | - |
dc.author.google | Lee, NH | - |
dc.author.google | Kim, HW | - |
dc.author.google | Kang, B | - |
dc.relation.volume | 51 | - |
dc.relation.issue | 2 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | Japanese Journal of Applied Physics | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.51, no.2 | - |
dc.identifier.wosid | 000303481400020 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 2 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 51 | - |
dc.contributor.affiliatedAuthor | Kang, B | - |
dc.identifier.scopusid | 2-s2.0-84863181513 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | HOT-CARRIER DEGRADATION | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | INSTABILITY | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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