DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, CH | - |
dc.contributor.author | Ko, MD | - |
dc.contributor.author | Kim, KH | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Yoon, JS | - |
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-03-31T08:53:58Z | - |
dc.date.available | 2016-03-31T08:53:58Z | - |
dc.date.created | 2012-11-30 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2012-OAK-0000026065 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16267 | - |
dc.description.abstract | The dc performance and low-frequency (LF) noise behaviors after hot-carrier (HC)-induced stress were compared for a junctionless nanowire transistor (JNT) and an inversion-mode nanowire transistor (INT). Less dc degradation was found in the JNT than in the INT. Due to the low lateral peak electric field (E-field) and electrons traveling through the center of the nanowire, the LF noise increment after HC-induced stress in the JNT is much lower than that in the INT. Furthermore, due to the higher lateral peak E-field located under the gate and the conduction path that occurs near the surface, the LF noise of the INT is very sensitive to HC stress. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.title | Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFET | - |
dc.type | Article | - |
dc.contributor.college | 창의IT융합공학과 | - |
dc.identifier.doi | 10.1109/LED.2012.2213575 | - |
dc.author.google | Park, CH | - |
dc.author.google | Ko, MD | - |
dc.author.google | Kim, KH | - |
dc.author.google | Lee, SH | - |
dc.author.google | Yoon, JS | - |
dc.author.google | Lee, JS | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 33 | - |
dc.relation.issue | 11 | - |
dc.relation.startpage | 1538 | - |
dc.relation.lastpage | 1540 | - |
dc.contributor.id | 10106021 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.33, no.11, pp.1538 - 1540 | - |
dc.identifier.wosid | 000310387100009 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1540 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1538 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 33 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-84867899778 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Hot-carrier (HC)-induced degradation | - |
dc.subject.keywordAuthor | junctionless nanowire transistor (JNT) | - |
dc.subject.keywordAuthor | low-frequency (LF) noise | - |
dc.subject.keywordAuthor | multigate | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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