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Post-growth modification of electrical properties of ZnTe nanowires SCIE SCOPUS

Title
Post-growth modification of electrical properties of ZnTe nanowires
Authors
Faryabi, HDavami, KKheirabi, NShaygan, MLee, JSMeyyappan, M
Date Issued
2012-08-10
Publisher
ELSEVIER
Abstract
ZnTe nanowires, grown by a vapor-liquid-solid technique are p-type and show a very high intrinsic resistivity. Enhancement of the nanowire conductivity was investigated by vacuum annealing, doping and Joule heating. The current-voltage (I-V) characteristics were measured in all cases and electrical parameters such as resistivity, carrier concentration and mobility were computed from the I-V curves. An improvement of five orders of magnitude in the electrical conductivity was seen after thermal annealing and Joule heating, comparable to the enhancement in conductivity obtained by doping. Published by Elsevier B.V.
Keywords
THIN-FILMS; OPTICAL-PROPERTIES; ROUTE
URI
https://oasis.postech.ac.kr/handle/2014.oak/16330
DOI
10.1016/J.CPLETT.2012.06.052
ISSN
0009-2614
Article Type
Article
Citation
CHEMICAL PHYSICS LETTERS, vol. 543, page. 117 - 120, 2012-08-10
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이정수LEE, JEONG SOO
Dept of Electrical Enginrg
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