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Cited 2 time in webofscience Cited 2 time in scopus
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dc.contributor.authorLee, KJ-
dc.contributor.authorKim, DM-
dc.contributor.authorKyuwook Ihm-
dc.contributor.authorRee, M-
dc.contributor.authorTai-Hee Kang-
dc.contributor.authorChung, S-
dc.date.accessioned2016-03-31T08:59:11Z-
dc.date.available2016-03-31T08:59:11Z-
dc.date.created2012-07-30-
dc.date.issued2012-01-30-
dc.identifier.issn0003-6951-
dc.identifier.other2012-OAK-0000025656-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/16426-
dc.description.abstractWe show a set-up of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found in contrast to the Al/6F-TPA PI/Al structure, leading to a write-once-read-many behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681776]-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherAmerican Institute of Physics-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.subjectMEMORY DEVICES-
dc.subjectTHIN-FILMS-
dc.subjectPOLYIMIDE-
dc.subjectPERFORMANCE-
dc.subjectELECTRONICS-
dc.subjectXPS-
dc.titleElectrical Phase Transition of Poly(4,4'-aminotriphenylene hexafluoroisopropy lidenediphthalimide) by Photogenerated Charged Carrier Injection-
dc.typeArticle-
dc.contributor.college첨단재료과학부-
dc.identifier.doi10.1063/1.3681776-
dc.author.googleLee, KJ-
dc.author.googleKim, DM-
dc.author.googleIhm, K-
dc.author.googleRee, M-
dc.author.googleKang, TH-
dc.author.googleChung, S-
dc.relation.volume100-
dc.relation.issue5-
dc.relation.startpage53303-
dc.contributor.id10115761-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.100, no.5, pp.53303-
dc.identifier.wosid000300065300083-
dc.date.tcdate2019-01-01-
dc.citation.number5-
dc.citation.startPage53303-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume100-
dc.contributor.affiliatedAuthorRee, M-
dc.contributor.affiliatedAuthorTai-Hee Kang-
dc.contributor.affiliatedAuthorChung, S-
dc.identifier.scopusid2-s2.0-84863024285-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.description.scptc2*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusMEMORY DEVICES-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusPOLYIMIDE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusXPS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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