DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, KJ | - |
dc.contributor.author | Kim, DM | - |
dc.contributor.author | Kyuwook Ihm | - |
dc.contributor.author | Ree, M | - |
dc.contributor.author | Tai-Hee Kang | - |
dc.contributor.author | Chung, S | - |
dc.date.accessioned | 2016-03-31T08:59:11Z | - |
dc.date.available | 2016-03-31T08:59:11Z | - |
dc.date.created | 2012-07-30 | - |
dc.date.issued | 2012-01-30 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2012-OAK-0000025656 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16426 | - |
dc.description.abstract | We show a set-up of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found in contrast to the Al/6F-TPA PI/Al structure, leading to a write-once-read-many behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681776] | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | American Institute of Physics | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.subject | MEMORY DEVICES | - |
dc.subject | THIN-FILMS | - |
dc.subject | POLYIMIDE | - |
dc.subject | PERFORMANCE | - |
dc.subject | ELECTRONICS | - |
dc.subject | XPS | - |
dc.title | Electrical Phase Transition of Poly(4,4'-aminotriphenylene hexafluoroisopropy lidenediphthalimide) by Photogenerated Charged Carrier Injection | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | - |
dc.identifier.doi | 10.1063/1.3681776 | - |
dc.author.google | Lee, KJ | - |
dc.author.google | Kim, DM | - |
dc.author.google | Ihm, K | - |
dc.author.google | Ree, M | - |
dc.author.google | Kang, TH | - |
dc.author.google | Chung, S | - |
dc.relation.volume | 100 | - |
dc.relation.issue | 5 | - |
dc.relation.startpage | 53303 | - |
dc.contributor.id | 10115761 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.5, pp.53303 | - |
dc.identifier.wosid | 000300065300083 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 53303 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | Ree, M | - |
dc.contributor.affiliatedAuthor | Tai-Hee Kang | - |
dc.contributor.affiliatedAuthor | Chung, S | - |
dc.identifier.scopusid | 2-s2.0-84863024285 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MEMORY DEVICES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | POLYIMIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | XPS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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