DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, B | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Cho, M | - |
dc.contributor.author | Namkung, W | - |
dc.contributor.author | Kim, SJ | - |
dc.contributor.author | Yoo, HY | - |
dc.date.accessioned | 2016-03-31T08:59:43Z | - |
dc.date.available | 2016-03-31T08:59:43Z | - |
dc.date.created | 2012-06-26 | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 0093-3813 | - |
dc.identifier.other | 2012-OAK-0000025610 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/16442 | - |
dc.description.abstract | 5 Plasma-based ion implantation (PBII) is the well-established technique for material surface modification. In this paper, we described the ballistic-mode PBII process in which repetitive high-voltage pulses are applied to the grid a few centimeters from a polyimide (PI) film target. The high-voltage pulse applied to the grid has the peak values of -30 kV, width of 2.5 mu s, rise time of 1.5 mu s, and fall time of 0.5 or 40 mu s. In this process, ions propagate ballistically from a grid to the PI film and modify the surface resistivity of the PI film. The efficiency of surface-resistivity modification depends on the fall time of the pulse applied to the grid. The ballistic-mode PBII process affects the surface characteristics of PI to a depth of similar to 90 nm. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON PLASMA SCIENCE | - |
dc.subject | Insulator surface modification | - |
dc.subject | ion implantation | - |
dc.subject | pulse modulator | - |
dc.subject | surface resistivity | - |
dc.subject | DISSIPATION | - |
dc.subject | TECHNOLOGY | - |
dc.title | Ballistic-mode plasma-based ion implantation for surface-resistivity modification of polyimide film | - |
dc.type | Article | - |
dc.contributor.college | 첨단원자력공학부 | - |
dc.identifier.doi | 10.1109/TPS.2012.219 | - |
dc.author.google | Park B., Kim J., Cho M., Namkung W., Kim S.J., Yoo H.Y. | - |
dc.relation.volume | 40 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 1749 | - |
dc.relation.lastpage | 1752 | - |
dc.contributor.id | 10151947 | - |
dc.relation.journal | IEEE TRANSACTIONS ON PLASMA SCIENCE | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON PLASMA SCIENCE, v.40, no.6, pp.1749 - 1752 | - |
dc.identifier.wosid | 000305156200018 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1752 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1749 | - |
dc.citation.title | IEEE TRANSACTIONS ON PLASMA SCIENCE | - |
dc.citation.volume | 40 | - |
dc.contributor.affiliatedAuthor | Cho, M | - |
dc.identifier.scopusid | 2-s2.0-84862300355 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Insulator surface modification | - |
dc.subject.keywordAuthor | ion implantation | - |
dc.subject.keywordAuthor | pulse modulator | - |
dc.subject.keywordAuthor | surface resistivity | - |
dc.relation.journalWebOfScienceCategory | Physics, Fluids & Plasmas | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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