High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires

Abstract

We report the preparation of high-performance low-voltage pentacene-based organic field-effect transistors (OFETs) fabricated on a metallic fiber (Al wire) substrate. The surface roughness of the wire was significantly reduced after 10 min of electro-polishing. A 120 nm thick Al2O3 gate dielectric layer was deposited on the anodized wire, followed by octadecyltrichlorosilane (ODTS) treatment. The ODTS-modified Al2O3 gate dielectrics formed around the Al wire showed a high capacitance of 50.1 nF cm(-2) and hydrophobic surface characteristics. The resulting OFETs exhibited hysteresis-free operation with a high mobility of 0.345 cm(2) V-1 s(-1) within a low operating voltage range of -5 V, and maintained their high performance at an applied tensile strain of bending radius similar to 2.2.