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The Influence of the Solvent Evaporation Rate on the Phase Separation and Electrical Performances of Soluble Acene-Polymer Blend Semiconductors SCIE SCOPUS

Title
The Influence of the Solvent Evaporation Rate on the Phase Separation and Electrical Performances of Soluble Acene-Polymer Blend Semiconductors
Authors
Lee, WHKwak, DAnthony, JELee, HSChoi, HHKim, DHLee, SGCho, K
Date Issued
2012-01-25
Publisher
WILEY-V C H VERLAG GMBH
Abstract
The phase-separation characteristics of spin-cast difluorinated-triethylsilylethynyl anthradithiophene (F-TESADT)/poly(methyl methacrylate) (PMMA) blends are investigated with the aim of fabricating transistors with a high field-effect mobility and stability. It is found that the presence of PMMA in the F-TESADT/PMMA blends prevents dewetting of F-TESADT from the substrate and provides a platform for F-TESADT molecules to segregate and crystallize at the airfilm interface. By controlling the solvent evaporation rate of the spin-cast blend solution, it is possible to regulate the phase separation of the two components, which in turn determines the structural development of the F-TESADT crystals on PMMA. At a low solvent evaporation rate, a bilayer structure consisting of highly ordered F-TESAT crystals on the top and low-trap PMMA dielectric on the bottom can be fabricated by a one-step spin-casting process. The use of F-TESADT/PMMA blend films in bottom gate transistors produces much higher field-effect mobilities and greater stability than homo F-TESADT films because the phase-separated interface provides an efficient pathway for charge transport.
Keywords
organic semiconductors; soluble acene; organic field-effect transistors; phase separation; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC TRANSISTORS; HIGH-MOBILITY; FUNCTIONALIZED ACENES; BIAS-STRESS; ELECTRONICS; PENTACENE; ANTHRADITHIOPHENE; CRYSTALLIZATION
URI
https://oasis.postech.ac.kr/handle/2014.oak/16649
DOI
10.1002/ADFM.201101159
ISSN
1616-301X
Article Type
Article
Citation
ADVANCED FUNCTIONAL MATERIALS, vol. 22, no. 2, page. 267 - 281, 2012-01-25
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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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