Exciton Scattering Mechanism in a Single Semiconducting MgZnO Nanorod
SCIE
SCOPUS
- Title
- Exciton Scattering Mechanism in a Single Semiconducting MgZnO Nanorod
- Authors
- Jinkyoung Yoo; Le Si Dang; Bonghwan Chon; Joo, T; Gyu-Chul Lee
- Date Issued
- 2012-02
- Publisher
- American Chemical Society
- Abstract
- Excitonic phenomena, such as excitonic absorption and emission, have been used in many photonic and optoelectronic semiconductor device applications. As the sizes of these nanoscale materials have approached to exciton diffusion lengths in semiconductors, a fundamental understanding of exciton transport in semiconductors has become imperative. We present exciton transport in a single MgZnO nanorod in the spatiotemporal regime with several nanometer-scale spatial resolution and several tens of picosecond temporal resolution. This study was performed using temperature-dependent cathodoluminescence and time-resolved photoluminescence spectroscopies. The exciton diffusion length in the MgZnO nanorod decreased from 100 to 70 nm with increasing temperature in the range of S and 80 K The results obtained for the temperature dependence of exciton diffusion length and luminescence lifetime revealed that the dominant exciton scattering mechanism in MgZnO nanorod is exciton-phonon assisted piezoelectric field scattering.
- Keywords
- Exciton scattering; exciton diffusion; MgZnO; nanorod; quantum structure; cathodoluminescence; time-resolved photoluminescence; TIME-RESOLVED PHOTOLUMINESCENCE; MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; DIFFUSION; CDSE; CATHODOLUMINESCENCE; HETEROSTRUCTURES; EMISSION; GAIN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16811
- DOI
- 10.1021/NL202626Y
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- NANO LETTERS, vol. 12, no. 2, page. 556 - 561, 2012-02
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.