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Cited 43 time in webofscience Cited 44 time in scopus
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dc.contributor.authorKim, B-
dc.contributor.authorVladimir Stojanovic-
dc.date.accessioned2016-03-31T09:17:06Z-
dc.date.available2016-03-31T09:17:06Z-
dc.date.created2012-01-26-
dc.date.issued2010-06-
dc.identifier.issn0018-9200-
dc.identifier.other2010-OAK-0000024577-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/16947-
dc.description.abstractThis work describes the architecture and circuit implementation of a high-data-rate, energy-efficient equalized transceiver for high-loss dispersive channels, such as RC-limited on-chip interconnects or silicon-carrier packaging modules. The charge-injection transmitter directly conducts pre-emphasis current from the supply into the channel, eliminating the power overhead of analog current subtraction in conventional transmit pre-emphasis, while significantly relaxing the driver coefficient accuracy requirements. The transmitter utilizes a power efficient non-linear driver by compensating non-linearity with pre-distorted equalization coefficients. A trans-impedance amplifier at the receiver achieves low static power consumption, large signal amplitude, and high bandwidth by mitigating limitations of purely-resistive termination. A test chip is fabricated in 90-nm bulk CMOS technology and tested over a 10-mm, 2-mu m pitched on-chip differential wire. The transceiver consumes 0.37-0.63 pJ/b with 4-6 Gb/s/ch.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherIEEE-
dc.relation.isPartOfIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.subjectEqualized on-chip interconnect-
dc.subjectRC-dominant wire-
dc.subjectcharge injection FFE-
dc.subjectpre-distortion FFE-
dc.subjecttrans-impedance receiver-
dc.subjecteye sensitivity-
dc.titleAn Energy-efficient Equalized Transceiver for RC-dominant Channels-
dc.typeArticle-
dc.contributor.college전자전기공학과-
dc.identifier.doi10.1109/JSSC.2010.2047458-
dc.author.googleKim, B-
dc.author.googleStojanovic, V-
dc.relation.volume45-
dc.relation.issue6-
dc.relation.startpage1186-
dc.relation.lastpage1197-
dc.contributor.id11082511-
dc.relation.journalIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.relation.sciSCI-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.45, no.6, pp.1186 - 1197-
dc.identifier.wosid000281763900009-
dc.date.tcdate2019-01-01-
dc.citation.endPage1197-
dc.citation.number6-
dc.citation.startPage1186-
dc.citation.titleIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.citation.volume45-
dc.contributor.affiliatedAuthorKim, B-
dc.identifier.scopusid2-s2.0-77953240139-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc30-
dc.description.scptc29*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordAuthorEqualized on-chip interconnect-
dc.subject.keywordAuthorRC-dominant wire-
dc.subject.keywordAuthorcharge injection FFE-
dc.subject.keywordAuthorpre-distortion FFE-
dc.subject.keywordAuthortrans-impedance receiver-
dc.subject.keywordAuthoreye sensitivity-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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