DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, NH | - |
dc.contributor.author | Baek, D | - |
dc.contributor.author | Kang, B | - |
dc.date.accessioned | 2016-03-31T09:30:24Z | - |
dc.date.available | 2016-03-31T09:30:24Z | - |
dc.date.created | 2011-08-11 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2011-OAK-0000023928 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17275 | - |
dc.description.abstract | This paper investigates the degradation mechanism of a nanoscale n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) that is subjected to OFF-state stress at high temperature and the impact of stress-induced defects on threshold voltage V(th) during drain relaxation. Experimental results indicate that acceptor-like interface traps N(it), positive oxide charges Q(ox), and neutral electron traps were generated by the OFF-state stress. Although the N(it) generated by the OFF-state stress caused an increase in V(th), it did not influence V(th) during drain relaxation at a positive gate voltage. Drain relaxation filled the neutral electron traps and neutralized positive Q(ox)'s, which increased V(th) and decreased the OFF-current significantly. This new observation suggests that the OFF-state stress-induced defects in a nanoscaled nMOSFET should be seriously taken in evaluating the reliability of inverter circuits. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | Electron trap | - |
dc.subject | high temperature | - |
dc.subject | interface trap | - |
dc.subject | metal-oxide-semiconductor field-effect transistor (MOSFET) | - |
dc.subject | OFF-state stress | - |
dc.subject | positive oxide charge | - |
dc.subject | INDUCED MOSFET DEGRADATION | - |
dc.subject | LEAKAGE CURRENT | - |
dc.subject | P-MOSFETS | - |
dc.subject | ELECTRON | - |
dc.subject | TRANSISTORS | - |
dc.subject | GENERATION | - |
dc.subject | DEPENDENCE | - |
dc.subject | MODEL | - |
dc.subject | BIAS | - |
dc.title | Effect of OFF-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1109/LED.2011.2145350 | - |
dc.author.google | Lee, NH | - |
dc.author.google | Baek, D | - |
dc.author.google | Kang, B | - |
dc.relation.volume | 32 | - |
dc.relation.issue | 7 | - |
dc.relation.startpage | 856 | - |
dc.relation.lastpage | 858 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.32, no.7, pp.856 - 858 | - |
dc.identifier.wosid | 000292165200008 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 858 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 856 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Kang, B | - |
dc.identifier.scopusid | 2-s2.0-79959793580 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 8 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | INDUCED MOSFET DEGRADATION | - |
dc.subject.keywordPlus | LEAKAGE CURRENT | - |
dc.subject.keywordPlus | P-MOSFETS | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | GENERATION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | BIAS | - |
dc.subject.keywordAuthor | Electron trap | - |
dc.subject.keywordAuthor | high temperature | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor field-effect transistor (MOSFET) | - |
dc.subject.keywordAuthor | OFF-state stress | - |
dc.subject.keywordAuthor | positive oxide charge | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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