DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, HK | - |
dc.contributor.author | Baik, JM | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T09:33:36Z | - |
dc.date.available | 2016-03-31T09:33:36Z | - |
dc.date.created | 2011-07-11 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.issn | 1528-7483 | - |
dc.identifier.other | 2011-OAK-0000023796 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17337 | - |
dc.description.abstract | Epitaxial growth of ZnO film on Si(111) substrates using an MgO interfacial layer has been investigated. The MgO layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si, producing a clear interface. A domain-matched structure with mixed 4/3 and 5/4 domains was formed at the interface of Si and MgO to achieve the lowest domain mismatch. Moreover, the epitaxial ZnO film was grown on a MgO buffer layer with a domain matched structure of 11/12 domains, resulting in an (0001)[1 (2) over bar 10](ZnO)parallel to(111)[1 (1) over bar0](MgO)parallel to(111)[1 (1) over bar0](Si) epitaxial relation, The high crystallinity of ZnO film grown on MgO/Si shows good optical performance with strong photoluminescence and improved Hall mobility. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.relation.isPartOf | CRYSTAL GROWTH & DESIGN | - |
dc.subject | BUFFER LAYER | - |
dc.subject | FILM | - |
dc.subject | GAN | - |
dc.subject | CONTACT | - |
dc.subject | SILICON | - |
dc.title | Design of an Interfacial Layer to Block Chemical Reaction for Epitaxial ZnO Growth on a Si Substrate | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | - |
dc.identifier.doi | 10.1021/CG200203S | - |
dc.author.google | Yu, HK | - |
dc.author.google | Baik, JM | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 11 | - |
dc.relation.issue | 6 | - |
dc.relation.startpage | 2438 | - |
dc.relation.lastpage | 2443 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | CRYSTAL GROWTH & DESIGN | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCIE | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CRYSTAL GROWTH & DESIGN, v.11, no.6, pp.2438 - 2443 | - |
dc.identifier.wosid | 000291074600053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 2443 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2438 | - |
dc.citation.title | CRYSTAL GROWTH & DESIGN | - |
dc.citation.volume | 11 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-79958010048 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 14 | - |
dc.description.scptc | 14 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | SILICON | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
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