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High-Mobility Graphene Nanoribbons Prepared Using Polystyrene Dip-Pen Nanolithography SCIE SCOPUS
- Title
- High-Mobility Graphene Nanoribbons Prepared Using Polystyrene Dip-Pen Nanolithography
- Date Issued
- 2011-04-20
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Graphene nanoribbons (GNRs) are fabricated by dip-pen nanolithography and polystyrene etching techniques on a SrTiO3/Nb-doped SrTiO3 substrate. A GNR field-effect transistor (FET) shows bipolar FET behavior with a high mobility and low operation voltage at room temperature because of the atomically flat surface and the large dielectric constant of the insulating SrTiO3 layer, respectively.
- Keywords
- LAYER GRAPHENE; OXIDE; LITHOGRAPHY; TRANSPORT; RIBBONS
- ISSN
- 0002-7863
- Article Type
- Article
- Citation
- JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 133, no. 15, page. 5623 - 5625, 2011-04-20
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Related Researcher
- 장현명JANG, HYUN MYUNG
- Div of Advanced Materials Science