DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, SO | - |
dc.contributor.author | An, TK | - |
dc.contributor.author | Chen, J | - |
dc.contributor.author | Kang, I | - |
dc.contributor.author | Kang, SH | - |
dc.contributor.author | Chung, DS | - |
dc.contributor.author | Park, CE | - |
dc.contributor.author | Kim, YH | - |
dc.contributor.author | Kwon, SK | - |
dc.date.accessioned | 2016-03-31T09:36:40Z | - |
dc.date.available | 2016-03-31T09:36:40Z | - |
dc.date.created | 2011-06-16 | - |
dc.date.issued | 2011-05-10 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.other | 2011-OAK-0000023694 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17395 | - |
dc.description.abstract | Four new quaterthiophene derivatives with end-groups composed of dicyclohexyl ethyl (DCE4T), dicyclohexyl butyl (DCB4T), cyclohexyl ethyl (CE4T), and cyclohexyl butyl (CB4T) were designed. All materials showed high solubility in common organic solvents. UV-vis absorption measurements showed that the quaterthiophene derivatives with asymmetrically substituted cyclohexyl end-groups (CE4T and CB4T) preferred H-type aggregation whereas those with symmetrically substituted cyclohexyl end-groups (DCE4T and DCB4T) preferred J-type aggregation. The molecular structure-dependent packing (H or J) of the new quaterthiophene derivatives was analyzed by grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. The field-effect mobilities of devices that incorporated the asymmetrical molecules, CE4T and CB4T, were quite high, above 10(-2) cm (2) V-1 s(-1), due to H-aggregation, whereas the fi eld-effect mobilities of devices that incorporated symmetrical molecules, DCE4T and DCB4T, were poor, below 10(-4) cm (2) V-1 s(-1), due to J-aggregation. More importantly, H-aggregation within the thin fi lm provided stable crystalline morphologies in the spin-coated fi lms, and, thus, thin fi lm transistors (TFTs) using cyclohexylated quaterthiophenes yielded highly reproducible transistor performances. The distributions of measured fi eld-effect mobilities in transistors based on cyclohexylated quaterthiophenes with H-aggregation were remarkably narrow. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.relation.isPartOf | ADVANCED FUNCTIONAL MATERIALS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | X-RAY-SCATTERING | - |
dc.subject | OLIGOFLUORENE-THIOPHENE DERIVATIVES | - |
dc.subject | HIGH-PERFORMANCE SEMICONDUCTORS | - |
dc.subject | SELF-ASSEMBLED MONOLAYER | - |
dc.subject | END-CAPPED OLIGOMERS | - |
dc.subject | TRANSPORT-PROPERTIES | - |
dc.subject | CRYSTAL-STRUCTURE | - |
dc.subject | EFFECT MOBILITY | - |
dc.subject | SIDE-CHAIN | - |
dc.title | H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | - |
dc.identifier.doi | 10.1002/ADFM.201002367 | - |
dc.author.google | Kim, SO | - |
dc.author.google | An, TK | - |
dc.author.google | Chen, J | - |
dc.author.google | Kang, I | - |
dc.author.google | Kang, SH | - |
dc.author.google | Chung, DS | - |
dc.author.google | Park, CE | - |
dc.author.google | Kim, YH | - |
dc.author.google | Kwon, SK | - |
dc.relation.volume | 21 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 1616 | - |
dc.relation.lastpage | 1623 | - |
dc.contributor.id | 10104044 | - |
dc.relation.journal | ADVANCED FUNCTIONAL MATERIALS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.21, no.9, pp.1616 - 1623 | - |
dc.identifier.wosid | 000290530500010 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1623 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1616 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 21 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-79957581335 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 94 | - |
dc.description.scptc | 87 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE SEMICONDUCTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYER | - |
dc.subject.keywordPlus | END-CAPPED OLIGOMERS | - |
dc.subject.keywordPlus | X-RAY-SCATTERING | - |
dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
dc.subject.keywordPlus | SIDE-CHAIN | - |
dc.subject.keywordPlus | OLIGOTHIOPHENES | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | QUATERTHIOPHENES | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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