DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sohn, CW | - |
dc.contributor.author | Sagong, HC | - |
dc.contributor.author | Jeong, EY | - |
dc.contributor.author | Choi, DY | - |
dc.contributor.author | Park, MS | - |
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Kang, CY | - |
dc.contributor.author | Jammy, R | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2016-03-31T09:42:15Z | - |
dc.date.available | 2016-03-31T09:42:15Z | - |
dc.date.created | 2011-05-16 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2011-OAK-0000023504 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17493 | - |
dc.description.abstract | In this letter, we analyze the nonsaturating upturns of capacitance under strong accumulation bias in MOS capacitors with high-k dielectrics. By comparing the electrical properties of dielectric samples with and without HfO(2) and by varying the ambient temperature, it is found that the conduction through the shallow trap levels in the HfO(2) bulk produces not only a steady-state current but also a dynamic current, which, in turn, causes the upturn in capacitance. The addition of RC shunts to the conventional small-signal model is proposed to consider the dynamic leakage effect. The model's effectiveness is verified by fitting the measured impedance spectrum and the measured capacitance. We suggest that measuring at a high frequency of hundreds of megahertz eliminates the dynamic interaction by shallow trap levels, allowing gate capacitance to be successfully reconstructed. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | Capacitance measurement | - |
dc.subject | dynamic response | - |
dc.subject | equivalent circuits | - |
dc.subject | hafnium oxide | - |
dc.subject | high-k dielectrics | - |
dc.subject | radio-frequency measurement | - |
dc.subject | shallow trap level | - |
dc.subject | upturns | - |
dc.subject | EXTRACTION | - |
dc.subject | HF | - |
dc.title | Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics | - |
dc.type | Article | - |
dc.contributor.college | 정보전자융합공학부 | - |
dc.identifier.doi | 10.1109/LED.2011.2108257 | - |
dc.author.google | Sohn, CW | - |
dc.author.google | Sagong, HC | - |
dc.author.google | Jeong, EY | - |
dc.author.google | Choi, DY | - |
dc.author.google | Park, MS | - |
dc.author.google | Lee, JS | - |
dc.author.google | Kang, CY | - |
dc.author.google | Jammy, R | - |
dc.author.google | Jeong, YH | - |
dc.relation.volume | 32 | - |
dc.relation.issue | 4 | - |
dc.relation.startpage | 434 | - |
dc.relation.lastpage | 436 | - |
dc.contributor.id | 10084860 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.434 - 436 | - |
dc.identifier.wosid | 000288664800002 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 436 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 434 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 32 | - |
dc.contributor.affiliatedAuthor | Lee, JS | - |
dc.identifier.scopusid | 2-s2.0-79953038247 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.description.scptc | 10 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Capacitance measurement | - |
dc.subject.keywordAuthor | dynamic response | - |
dc.subject.keywordAuthor | equivalent circuits | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | high-k dielectrics | - |
dc.subject.keywordAuthor | radio-frequency measurement | - |
dc.subject.keywordAuthor | shallow trap level | - |
dc.subject.keywordAuthor | upturns | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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