DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, CK | - |
dc.contributor.author | Kim, M | - |
dc.contributor.author | Chung, SY | - |
dc.contributor.author | Chun, J | - |
dc.contributor.author | Kim, DE | - |
dc.date.accessioned | 2016-03-31T12:11:01Z | - |
dc.date.available | 2016-03-31T12:11:01Z | - |
dc.date.created | 2009-08-20 | - |
dc.date.issued | 2004-11-01 | - |
dc.identifier.issn | 0009-2614 | - |
dc.identifier.other | 2004-OAK-0000004636 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17643 | - |
dc.description.abstract | SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures on silicon and silica substrates, respectively, have been firstly synthesized via using GaN as a resource of Ga. The silica wafer is mainly responsible for the formation of SiOxNy-based nanostructures and the intermediate Ga plays an important role in the formation of diverse nanostructures. SEM, TEM, line scan and SAED were employed to characterize as-prepared samples. The growth mechanism of as-prepared samples is also discussed. (C) 2004 Elsevier B.V. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | CHEMICAL PHYSICS LETTERS | - |
dc.subject | LIQUID-PHASE EPITAXY | - |
dc.subject | SILICON | - |
dc.subject | NANOWIRES | - |
dc.subject | THIN | - |
dc.subject | SIO2 | - |
dc.subject | N2O | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | OXYNITRIDES | - |
dc.subject | GROWTH | - |
dc.title | The formation of SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures using GaN as a resource of Ga | - |
dc.type | Article | - |
dc.contributor.college | 물리학과 | - |
dc.identifier.doi | 10.1016/j.cplett.2004.09.066 | - |
dc.author.google | Xu, CK | - |
dc.author.google | Kim, M | - |
dc.author.google | Chung, SY | - |
dc.author.google | Chun, J | - |
dc.author.google | Kim, DE | - |
dc.relation.volume | 398 | - |
dc.relation.issue | 1-3 | - |
dc.relation.startpage | 264 | - |
dc.relation.lastpage | 269 | - |
dc.contributor.id | 10075453 | - |
dc.relation.journal | CHEMICAL PHYSICS LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | CHEMICAL PHYSICS LETTERS, v.398, no.1-3, pp.264 - 269 | - |
dc.identifier.wosid | 000224720300048 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 269 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 264 | - |
dc.citation.title | CHEMICAL PHYSICS LETTERS | - |
dc.citation.volume | 398 | - |
dc.contributor.affiliatedAuthor | Kim, DE | - |
dc.identifier.scopusid | 2-s2.0-5744221733 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | THIN | - |
dc.subject.keywordPlus | N2O | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
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