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X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface. SCIE SCOPUS

Title
X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface.
Authors
Argunova, TSGutkin, MYJe, JHSorokin, LMMosina, GNSavkina, NSShuman, VBLebedev, AA
Date Issued
2004-01
Publisher
TRANS TECH PUBLICATIONS LTD
Abstract
The understanding of micropipes in porous SiC has improved through x-ray synchrotron imaging. The use of phase sensitive radiography makes it possible to visualize micropipes in porous SiC substrates with high sensitivity and resolution. The micropipes have been observed as individuals and as plane or twisted dipoles. Some of individual micropipes were found to localize close to voids. High porosity associated with micropipes was revealed. The defect configurations provide clues on the mechanisms of micropipe sealing in porous SiC layers in the course of epitaxial overgrowth. The models are suggested to describe micropipe sealing.
Keywords
SiC; porous SiC; micropipes; synchrotron imaging; TEM; EPITAXIAL LAYERS; SILICON-CARBIDE
URI
https://oasis.postech.ac.kr/handle/2014.oak/17799
DOI
10.4028/www.scientific.net/MSF.457-460.363
ISSN
0255-5476
Article Type
Article
Citation
MATERIALS SCIENCE FORUM, vol. 457-460, page. 363 - 366, 2004-01
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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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