DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, G | - |
dc.contributor.author | Kim, DS | - |
dc.contributor.author | Lyu, HK | - |
dc.contributor.author | Park, HJ | - |
dc.contributor.author | Shin, JK | - |
dc.contributor.author | Choi, P | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, M | - |
dc.date.accessioned | 2016-03-31T12:21:21Z | - |
dc.date.available | 2016-03-31T12:21:21Z | - |
dc.date.created | 2009-03-17 | - |
dc.date.issued | 2004-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.other | 2004-OAK-0000004400 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17823 | - |
dc.description.abstract | In this work, a nonplanar, nonrectangular metal-oxide-semiconductor field effect transistor (MOSFET) with an asymmetrical channel structure for sensing charge in the Si micro-fluidic channel was fabricated, and the electrical characteristics of the fabricated three-dimensional (3-D) MOSFET were measured. The device was formed in the convex corner of a Si micro-fluidic channel using tetramethyl ammonium hydroxide (TMAH) anistropic etching solution, so that it would be suitable for combination with a micro-fluidic system. We approximated the nonplanar, nonrectangular 3-D MOSFET to a two-dimensional rectangular structure using the Schwartz-Christoffel transformation. The LEVEL1 device parameters of the 3-D MOSFET were extracted from the measured electrical device characteristics and were used in a simulation program with integrated circuit emphasis (SPICE) simulation. The measured and simulated results for the 3-D MOSFET were compared and found to show good agreement. We also investigated the feasibility of the proposed 3-D MOSFET as a charge sensor for detecting charged biomolecules. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | 3-D MOSFET | - |
dc.subject | Si micro-fluidic channel | - |
dc.subject | Schwartz-Christoffel transformation | - |
dc.subject | charge sensor | - |
dc.subject | SENSOR | - |
dc.title | Characteristics and modeling of a nonplanar nonrectangular metal oxide semiconductor field effect transistor for charge sensing in the Si micro-fluidic channel | - |
dc.type | Article | - |
dc.contributor.college | 기계공학과 | - |
dc.identifier.doi | 10.1143/JJAP.43.3896 | - |
dc.author.google | Lim, G | - |
dc.author.google | Kim, DS | - |
dc.author.google | Lyu, HK | - |
dc.author.google | Park, HJ | - |
dc.author.google | Shin, JK | - |
dc.author.google | Choi, P | - |
dc.author.google | Lee, JH | - |
dc.author.google | Lee, M | - |
dc.relation.volume | 43 | - |
dc.relation.issue | 6B | - |
dc.relation.startpage | 3896 | - |
dc.relation.lastpage | 3900 | - |
dc.contributor.id | 10097203 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Conference Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.6B, pp.3896 - 3900 | - |
dc.identifier.wosid | 000222615100053 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 3900 | - |
dc.citation.number | 6B | - |
dc.citation.startPage | 3896 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 43 | - |
dc.contributor.affiliatedAuthor | Lim, G | - |
dc.identifier.scopusid | 2-s2.0-4444302561 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | 3-D MOSFET | - |
dc.subject.keywordAuthor | Si micro-fluidic channel | - |
dc.subject.keywordAuthor | Schwartz-Christoffel transformation | - |
dc.subject.keywordAuthor | charge sensor | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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