DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, TK | - |
dc.contributor.author | Baek, CH | - |
dc.contributor.author | Kang, BK | - |
dc.date.accessioned | 2016-03-31T12:21:48Z | - |
dc.date.available | 2016-03-31T12:21:48Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-09 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.other | 2004-OAK-0000004392 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/17831 | - |
dc.description.abstract | This paper presents a method of surface treatment for improving the current gain of an AlGaAs/GaAs heterojunction bipolar transistor (HBT). Several recipes for GaAs surface treatment, including each and several combinations of the H, plasma, NH3 plasma, and (NH4)(2)S-x chemical treatments are examined. The lowest SiO2/GaAs interface state density of 1.23 x 10(10) cm(-2) eV(-1) is obtained when the GaAs surface is treated in sequence with (NH4)(2)S-x:H2O = 1:1 solution, H-2 plasma, and NH3 plasma. The current gain of an AlGaAs/GaAs HBT, whose extrinsic base surface is treated with this recipe, is enhanced at a low collector current by a factor of 2.5 from that without surface treatment. The maximum current gain is also enhanced by a factor of 1.37. (C) 2004 Elsevier Ltd. All rights reserved. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.subject | surface passivation | - |
dc.subject | surface treatment | - |
dc.subject | heterojunction bipolar transistor | - |
dc.subject | metal insulator capacitor | - |
dc.subject | X-ray photoelectron spectroscopy | - |
dc.subject | PLASMA PASSIVATION | - |
dc.subject | HYDROGEN | - |
dc.title | Surface treatment for enhancing current gain of AlGaAs/GaAs heterojunction bipolar transistor | - |
dc.type | Article | - |
dc.contributor.college | 전자전기공학과 | - |
dc.identifier.doi | 10.1016/J.SSE.2004.0 | - |
dc.author.google | Oh, TK | - |
dc.author.google | Baek, CH | - |
dc.author.google | Kang, BK | - |
dc.relation.volume | 48 | - |
dc.relation.issue | 9 | - |
dc.relation.startpage | 1549 | - |
dc.relation.lastpage | 1553 | - |
dc.contributor.id | 10071834 | - |
dc.relation.journal | SOLID-STATE ELECTRONICS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.48, no.9, pp.1549 - 1553 | - |
dc.identifier.wosid | 000222563100013 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 1553 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1549 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 48 | - |
dc.contributor.affiliatedAuthor | Kang, BK | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | surface passivation | - |
dc.subject.keywordAuthor | surface treatment | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor | - |
dc.subject.keywordAuthor | metal insulator capacitor | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
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