DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, CM | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2016-03-31T12:34:17Z | - |
dc.date.available | 2016-03-31T12:34:17Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2004-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.other | 2004-OAK-0000004078 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/18049 | - |
dc.description.abstract | Enhancement of electrical properties of an AlGaN-GaN heterostructure was achieved through isoelectronic A1-doping of the undoped channel layer during the growth by metal-organic chemical vapor deposition. The two-dimensional electron gas mobility was increased from 3390 to 4870 cm(2)/V(.)s at 77 K, and the crystal quality was significantly improved as A1 atoms were incorporated in the undoped GaN film. The AlGaN-GaN HFETs were fabricated on this material structure and exhibited a maximum drain current of 909 mA/mm, and a maximum transconductance of 232 mS/mm, corresponding to an increase of 30% and 21%, respectively. | - |
dc.description.statementofresponsibility | X | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGI | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.subject | AlGaN | - |
dc.subject | GaN | - |
dc.subject | heterostructure field-effect transistors (HFETs) | - |
dc.subject | isoelectronic doping | - |
dc.subject | PLASMA-ASSISTED MBE | - |
dc.subject | DENSITY | - |
dc.subject | HEMTS | - |
dc.subject | GAN | - |
dc.title | The improvement of DC performance in AlGaN-GaNHEFTs with isoelectronic Al-doped channels | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | - |
dc.identifier.doi | 10.1109/LED.2004.824246 | - |
dc.author.google | Jeon, CM | - |
dc.author.google | Lee, JH | - |
dc.author.google | Lee, JL | - |
dc.relation.volume | 25 | - |
dc.relation.issue | 3 | - |
dc.relation.startpage | 120 | - |
dc.relation.lastpage | 122 | - |
dc.contributor.id | 10105416 | - |
dc.relation.journal | IEEE ELECTRON DEVICE LETTERS | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.120 - 122 | - |
dc.identifier.wosid | 000189389600002 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 122 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 120 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 25 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-1642399733 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 13 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | PLASMA-ASSISTED MBE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | AlGaN | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | heterostructure field-effect transistors (HFETs) | - |
dc.subject.keywordAuthor | isoelectronic doping | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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